1. 目前位置：

瀏覽 的方式： 作者 Chang, C. Y.

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 1 到 20 筆資料，總共 27 筆  下一頁 >
公開日期標題作者
1-一月-2017Channel Modification Engineering by Plasma Processing in Tin-Oxide Thin Film Transistor: Experimental Results and First-Principles CalculationChiu, Y. C.; Chen, P. C.; Chang, S. L.; Zheng, Z. W.; Cheng, C. H.; Liou, G. L.; Kao, H. L.; Wu, Y. H.; Chang, C. Y.; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-六月-2011Design of a HTS Magnet for Application to Resonant X-Ray ScatteringChen, S. D.; Yu, Y. T.; Huang, Z. W.; Jan, J. C.; Hwang, C. S.; Chen, I. G.; Du, C. H.; Uen, T. M.; Huang, D. J.; Chang, C. Y.; 電子物理學系; Department of Electrophysics
1-十二月-2018Development of rapid and ultrasensitive flexible palladium nano-thin film biosensing electrode for V. Orientalis detectionWu, C. H.; Huang, Y. Z.; Chang, C. Y.; Chang, C. H.; 生物科技學系; Department of Biological Science and Technology
1-十月-2006Device linearity comparison of uniformly doped and delta-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTs (vol 27, pg 535, 2006)Lin, Y. C.; Chang, Edward Yi; Yamaguchi, H.; Hirayama, Y.; Chang, X. Y.; Chang, C. Y.; 材料科學與工程學系; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
1-二月-2007Effect of gate sinking on the device performance, of the InGaP/AlGaAs/InGaAs enhancement-mode PHEMTChu, L. H.; Chang, E. Y.; Chang, L.; Wu, Y. H.; Chen, S. H.; Hsu, H. T.; Lee, T. L.; Lien, Y. C.; Chang, C. Y.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-三月-2017Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illuminationChiu, Y. C.; Zheng, Z. W.; Cheng, C. H.; Chen, P. C.; Yen, S. S.; Fan, C. C.; Hsu, H. H.; Kao, H. L.; Chang, C. Y.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
8-一月-2007Growth of very-high-mobility AlGaSb/InAs high-electron-mobility transistor structure on si substrate for high speed electronic applicationsLin, Y. C.; Yamaguchi, H.; Chang, E. Y.; Hsieh, Y. C.; Ueki, M.; Hirayama, Y.; Chang, C. Y.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
27-七月-2009High efficiency light emitting diode with anisotropically etched GaN-sapphire interfaceLo, M. H.; Tu, P. M.; Wang, C. H.; Hung, C. W.; Hsu, S. C.; Cheng, Y. J.; Kuo, H. C.; Zan, H. W.; Wang, S. C.; Chang, C. Y.; Huang, S. C.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-一月-2014High Mobility InGaZnO Thin Film Transistor Using Narrow-Bandgap Titanium-Oxide Semiconductor as Channel Capping LayerHsu, H. H.; Chiou, P.; Chiu, Y. C.; Yen, S. S.; Chang, C. Y.; Cheng, C. H.; 電機工程學系; Department of Electrical and Computer Engineering
1-九月-2013High performance IGZO/TiO2 thin film transistors using Y2O3 buffer layers on polycarbonate substrateHsu, H. H.; Chang, C. Y.; Cheng, C. H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
31-八月-2007Highly integrated automotive radar sensorCheng, G. F.; Ho, H.; Wang, W. T.; Chang, C. Y.; Chung, S. J.; 電信工程研究所; Institute of Communications Engineering
24-十月-2011Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriersWang, C. H.; Chang, S. P.; Ku, P. H.; Li, J. C.; Lan, Y. P.; Lin, C. C.; Yang, H. C.; Kuo, H. C.; Lu, T. C.; Wang, S. C.; Chang, C. Y.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-六月-2018The Impact of the Shallow-Trench Isolation Effect on Flicker Noise of Source Follower MOSFETs in a CMOS Image SensorFan, C. C.; Chiu, Y. C.; Liu, C.; Lai, W. W.; Cheng, C. H.; Lin, D. L.; Li, G. R.; Lo, Y. H.; Chang, C. W.; Tsai, C. C.; Chang, C. Y.; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-一月-2017Investigation of Electrical Characteristics on 25-nm InGaAs Channel FinFET Using InAlAs Back Barrier and Al2O3 Gate DielectricLin, M. H.; Lin, Y. C.; Lin, Y. S.; Sun, W. J.; Chen, S. H.; Chiu, Y. C.; Cheng, C. H.; Chang, C. Y.; 光電系統研究所; 電子工程學系及電子研究所; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics
1-一月-2009Morphology and optical properties of zinc oxide thin films grown on Si (100) by metal-organic chemical vapor depositionLan, S. M.; Uen, W. Y.; Chan, C. E.; Chang, K. J.; Hung, S. C.; Li, Z. Y.; Yang, T. N.; Chiang, C. C.; Huang, P. J.; Yang, M. D.; Chi, G. C.; Chang, C. Y.; 光電工程學系; Department of Photonics
1-一月-2008Novel chirped multilayer quantum-dot lasersLin, G.; Chang, C. Y.; Tseng, W. C.; Lee, C. P.; Lin, K. F.; Xuan, R.; Chi, J. Y.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008Novel chirped multilayer quantum-dot lasers - art. no. 69970RLin, G.; Chang, C. Y.; Tseng, W. C.; Lee, C. P.; Lin, K. F.; Xuan, R.; Chi, J. Y.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
27-十月-2018On the Electrical Characteristics of Ferroelectric FinFET Using Hafnium Zirconium Oxide with Optimized Gate StackLin, M. H.; Fan, C. C.; Hsu, H. H.; Liu, C.; Chen, K. M.; Cheng, C. H.; Chang, C. Y.; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-八月-2014Performance enhancement of GaN-based flip-chip ultraviolet light-emitting diodes with a RPD AlN nucleation layer on patterned sapphire substrateLin, B. C.; Chiu, C. H.; Lee, C. Y.; Han, H. V.; Tu, P. M.; Chen, T. P.; Li, Z. Y.; Lee, P. T.; Lin, C. C.; Chi, G. C.; Chen, C. H.; Fan, B.; Chang, C. Y.; Kuo, H. C.; 交大名義發表; 光電系統研究所; 電子工程學系及電子研究所; 光電工程學系; National Chiao Tung University; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
15-九月-2006Self-assembled In0.22Ga0.78As quantum dots grown on metamorphic GaAs/Ge/SixGe1-x/Si substrateHsieh, Y. C.; Chang, E. Y.; Luo, G. L.; Chen, S. H.; Biswas, Dhrubes; Wang, S. Y.; Chang, C. Y.; 材料科學與工程學系; Department of Materials Science and Engineering
顯示 1 到 20 筆資料，總共 27 筆  下一頁 >