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Device linearity comparison of uniformly doped and delta-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTs (vol 27, pg 535, 2006)

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2006-10-01

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10.1109/LED.2006.884081

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http://dx.doi.org/10.1109/LED.2006.884081
 https://ir.lib.nycu.edu.tw/handle/11536/11722

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