Device linearity comparison of uniformly doped and delta-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTs (vol 27, pg 535, 2006)

Title:	Device linearity comparison of uniformly doped and delta-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTs (vol 27, pg 535, 2006)
Authors:	Lin, Y. C. Chang, Edward Yi Yamaguchi, H. Hirayama, Y. Chang, X. Y. Chang, C. Y. 材料科學與工程學系電子工程學系及電子研究所友訊交大聯合研發中心 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics D Link NCTU Joint Res Ctr
Issue Date:	1-Oct-2006
URI:	http://dx.doi.org/10.1109/LED.2006.884081 http://hdl.handle.net/11536/11722
ISSN:	0741-3106
DOI:	10.1109/LED.2006.884081
Journal:	IEEE ELECTRON DEVICE LETTERS
Volume:	27
Issue:	10
Begin Page:	866
End Page:	866
Appears in Collections:	Articles

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