Device linearity comparison of uniformly doped and delta-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTs (vol 27, pg 535, 2006)

標題:	Device linearity comparison of uniformly doped and delta-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTs (vol 27, pg 535, 2006)
作者:	Lin, Y. C. Chang, Edward Yi Yamaguchi, H. Hirayama, Y. Chang, X. Y. Chang, C. Y. 材料科學與工程學系電子工程學系及電子研究所友訊交大聯合研發中心 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics D Link NCTU Joint Res Ctr
公開日期:	1-Oct-2006
URI:	http://dx.doi.org/10.1109/LED.2006.884081 http://hdl.handle.net/11536/11722
ISSN:	0741-3106
DOI:	10.1109/LED.2006.884081
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	27
Issue:	10
起始頁:	866
結束頁:	866
Appears in Collections:	Articles

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