瀏覽 的方式: 作者 Chang, Ruey-Dar

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公開日期標題作者
1-五月-2009Effects of Minority-Carrier Response Behavior on Ge MOS Capacitor Characteristics: Experimental Measurements and Theoretical SimulationsCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Ling, Yu-Ting; Chang, Ruey-Dar; Kei, Chi-Chung; Hsiao, Chien-Nan; Liu, Jun-Cheng; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2016Fabrication and RTN Characteristics of Gate-All-Around Poly-Si Junctionless Nanowire TransistorsYang, Chen-Chen; Chen, Yung-Chen; Lin, Horng-Chih; Chang, Ruey-Dar; Li, Pei-Wen; Huang, Tiao-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
7-十月-2013Low-voltage high-speed programming/erasing floating-gate memory device with gate-all-around polycrystalline silicon nanowireLee, Ko-Hui; Tsai, Jung-Ruey; Chang, Ruey-Dar; Lin, Horng-Chih; Huang, Tiao-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2015Reliability Analysis of Amorphous Silicon Thin-Film Transistors during Accelerated ESD StressTsai, Jung-Ruey; Wen, Ting-Ting; Yang, Shao-Ming; Sheu, Gene; Chang, Ruey-Dar; Syu, Yi-Jhen; Liu, Chin-Ping; Chang, Hsiu-Fu; Wei, Zhao-Hui; 奈米中心; Nano Facility Center
2016閘極環繞式多晶矽無接面奈米線薄膜電體的製作及其隨機電訊噪音的探討楊陳辰; 林鴻志; 張睿達; Yang, Chen-Chen; Lin, Horng-Chih; Chang, Ruey-Dar; 電子工程學系 電子研究所