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1-五月-2019Characteristic Fluctuations of Dynamic Power Delay Induced by Random Nanosized Titanium Nitride Grains and the Aspect Ratio Effect of Gate-All-Around Nanowire CMOS Devices and CircuitsLi, Yiming; Chen, Chieh-Yang; Chuang, Min-Hui; Chao, Pei-Jung; 電機工程學系; Department of Electrical and Computer Engineering
1-一月-2014Impact of Geometry Aspect Ratio on 10-nm Gate-All-Around Silicon-Germanium Nanowire Field Effect TransistorsChao, Pei-Jung; Li, Yiming; 交大名義發表; 分子醫學與生物工程研究所; 電機資訊學士班; National Chiao Tung University; Institute of Molecular Medicine and Bioengineering; Undergraduate Honors Program of Electrical Engineering and Computer Science
2015Process Variation Effect, Metal-Gate Work-Function Fluctuation and Random Dopant Fluctuation of 10-nm Gate-All-Around Silicon Nanowire MOSFET DevicesLi, Yiming; Chang, Han-Tung; Lai, Chun-Ning; Chao, Pei-Jung; Chen, Chieh-Yang; 交大名義發表; 傳播研究所; 分子醫學與生物工程研究所; 電機學院; National Chiao Tung University; Institute of Communication Studies; Institute of Molecular Medicine and Bioengineering; College of Electrical and Computer Engineering
2016Statistical Device Simulation of Characteristic Fluctuation of 10-nm Gate-All-Around Silicon Nanowire MOSFETs Induced by Various Discrete Random DopantsSung, Wen-Li; Chang, Han-Tung; Chen, Chieh-Yang; Chao, Pei-Jung; Li, Yiming; 分子醫學與生物工程研究所; 電機工程學系; 電信工程研究所; Institute of Molecular Medicine and Bioengineering; Department of Electrical and Computer Engineering; Institute of Communications Engineering
1-一月-2017Timing and Power Fluctuations on Gate-All-Around Nanowire CMOS Circuit Induced by Various Sources of Random Discrete DopantsSung, Wen-Li; Chao, Pei-Jung; Li, Yiming; 分子醫學與生物工程研究所; 電信工程研究所; Institute of Molecular Medicine and Bioengineering; Institute of Communications Engineering
2017奈米氮化鈦晶粒對全閘極奈米線互補式金氧半場效應電晶體電路功率與延遲特性擾動之研究趙培蓉; 李義明; Chao, Pei-Jung; Li, Yiming; 生醫工程研究所
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