Process Variation Effect, Metal-Gate Work-Function Fluctuation and Random Dopant Fluctuation of 10-nm Gate-All-Around Silicon Nanowire MOSFET Devices

Abstract

In this work, process variation effect (PVE), work function fluctuation (WKF), and random dopant fluctuation (RDF) on 10-nm high-kappa/metal gate gate-all-around silicon nanowire MOSFET devices using full-quantum-mechanically validated and experimentally calibrated device simulation are studied. The small aspect ratio device has greater immunity of RDF, while suffers from PVE and WKF.