標題: | Process Variation Effect, Metal-Gate Work-Function Fluctuation and Random Dopant Fluctuation of 10-nm Gate-All-Around Silicon Nanowire MOSFET Devices |
作者: | Li, Yiming Chang, Han-Tung Lai, Chun-Ning Chao, Pei-Jung Chen, Chieh-Yang 交大名義發表 傳播研究所 分子醫學與生物工程研究所 電機學院 National Chiao Tung University Institute of Communication Studies Institute of Molecular Medicine and Bioengineering College of Electrical and Computer Engineering |
公開日期: | 2015 |
摘要: | In this work, process variation effect (PVE), work function fluctuation (WKF), and random dopant fluctuation (RDF) on 10-nm high-kappa/metal gate gate-all-around silicon nanowire MOSFET devices using full-quantum-mechanically validated and experimentally calibrated device simulation are studied. The small aspect ratio device has greater immunity of RDF, while suffers from PVE and WKF. |
URI: | http://hdl.handle.net/11536/136039 |
ISBN: | 978-1-4673-9894-7 |
期刊: | 2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) |
Appears in Collections: | Conferences Paper |