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公開日期標題作者
1-八月-2011Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxyFu, Yi-Keng; Lu, Yu-Hsuan; Jiang, Ren-Hao; Chen, Bo-Chun; Fang, Yen-Hsiang; Xuan, Rong; Su, Yan-Kuin; Lin, Chia-Feng; Chen, Jebb-Fang; 電子物理學系; Department of Electrophysics
21-三月-2011The effect of trimethylgallium flows in the AIInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxyFu, Yi-Keng; Jiang, Ren-Hao; Lu, Yu-Hsuan; Chen, Bo-Chun; Xuan, Rong; Fang, Yen-Hsiang; Lin, Chia-Feng; Su, Yan-Kuin; Chen, Jenn-Fang; 電子物理學系; Department of Electrophysics
15-十一月-2011Improved Performance of InGaN/GaN Light-Emitting Diodes With Thin Intermediate BarriersChen, Bo-Chun; Chang, Chun-Yen; Fu, Yi-Keng; Huang, Kai-Feng; Lu, Yu-Hsuan; Su, Yan-Kuin; 電子物理學系; Department of Electrophysics
15-六月-2011Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN SubstratesChao, Chu-Li; Xuan, Rong; Yen, Hsi-Hsuan; Chiu, Ching-Hsueh; Fang, Yen-Hsiang; Li, Zhen-Yu; Chen, Bo-Chun; Lin, Chien-Chung; Chiu, Ching-Hua; Guo, Yih-Der; Kuo, Hao-Chung; Chen, Jenn-Fang; Cheng, Shun-Jen; 光電系統研究所; 電子物理學系; 光電工程學系; Institute of Photonic System; Department of Electrophysics; Department of Photonics
1-十月-2011Study of InGaN-Based Light-Emitting Diodes on a Roughened Backside GaN Substrate by a Chemical Wet-Etching ProcessFu, Yi-Keng; Chen, Bo-Chun; Fang, Yen-Hsiang; Jiang, Ren-Hao; Lu, Yu-Hsuan; Xuan, Rong; Huang, Kai-Feng; Lin, Chia-Feng; Su, Yan-Kuin; Chen, Jebb-Fang; Chang, Chun-Yen; 電子物理學系; Department of Electrophysics
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