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公開日期標題作者
1-十一月-2016Cleaning methodology of small residue defect with surfactant in copper chemical mechanical polishing post-cleaningWei, Kuo-Hsiu; Hung, Chi-Cheng; Wang, Yu-Sheng; Liu, Chuan-Pu; Chen, Kei-Wei; Wang, Ying-Lang; 照明與能源光電研究所; Institute of Lighting and Energy Photonics
1-十一月-2016Cleaning methodology of small residue defect with surfactant in copper chemical mechanical polishing post-cleaningWei, Kuo-Hsiu; Hung, Chi-Cheng; Wang, Yu-Sheng; Liu, Chuan-Pu; Chen, Kei-Wei; Wang, Ying-Lang; 照明與能源光電研究所; Institute of Lighting and Energy Photonics
1-一月-2008Effect of bis-(3-sodiumsulfopropyl disulfide) byproducts on copper defects after chemical mechanical polishingHung, Chi-Cheng; Lee, Wen-Hsi; Hu, Shao-Yu; Chang, Shih-Chieh; Chen, Kei-Wei; Wang, Ying-Lang; 交大名義發表; National Chiao Tung University
1-一月-2010Effect of Cu-Ion Concentration in Concentrated H(3)PO(4) Electrolyte on Cu Electrochemical Mechanical PlanarizationKung, Te-Ming; Liu, Chuan-Pu; Chang, Shih-Chieh; Chen, Kei-Wei; Wang, Ying-Lang; 照明與能源光電研究所; Institute of Lighting and Energy Photonics
1-一月-2010Effect of Cu-Ion Concentration in Concentrated H3PO4 Electrolyte on Cu Electrochemical Mechanical PlanarizationKung, Te-Ming; Liu, Chuan-Pu; Chang, Shih-Chieh; Chen, Kei-Wei; Wang, Ying-Lang; 照明與能源光電研究所; Institute of Lighting and Energy Photonics
1-二月-2013Effects of (002) beta-Ta barrier on copper chemical mechanical polishing behaviorWang, Yu-Sheng; Chen, Kei-Wei; Cheng, Min-Yuan; Lee, Wen-Hsi; Wang, Ying-Lang; 材料科學與工程學系; 光電學院; Department of Materials Science and Engineering; College of Photonics
1-十月-2010Effects of direct current and pulse-reverse copper plating incubation behavior of self-annealingCheng, Min-Yuan; Chen, Kei-Wei; Liu, Tzeng-Feng; Wang, Ying-Lang; Feng, Hsien-Ping; 材料科學與工程學系; Department of Materials Science and Engineering
1-十月-2010Effects of direct current and pulse-reverse copper plating incubation behavior of self-annealingCheng, Min-Yuan; Chen, Kei-Wei; Liu, Tzeng-Feng; Wang, Ying-Lang; Feng, Hsien-Ping; 材料科學與工程學系; Department of Materials Science and Engineering
1-九月-2013The influence of abrasive particle size in copper chemical mechanical planarizationWei, Kuo-Hsiu; Wang, Yu-Sheng; Liu, Chuan-Pu; Chen, Kei-Wei; Wang, Ying-Lang; Cheng, Yi-Lung; 光電學院; College of Photonics
顯示 1 到 9 筆資料，總共 9 筆