瀏覽 的方式: 作者 Chen, LP

跳到: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字:  
顯示 1 到 20 筆資料,總共 27 筆  下一頁 >
公開日期標題作者
1-二月-1996Antenna charging effects on the electrical characteristics of polysilicon gate during electron cyclotron resonance etchingKang, TK; Ueng, SY; Dai, BT; Chen, LP; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2001An automatic macro program for radio frequency MOSFET characteristics analysisSu, CY; Chang, SJ; Chen, LP; Ho, YP; Huang, GW; Lin, DC; Tseng, BM; Lee, HY; Kuan, JF; Deng, YM; Wen, KA; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2000CMOS RFIC: Application to wireless transceiver designWen, KA; Wuen, WS; Huang, GW; Chen, LP; Chen, KY; Liu, SF; Chen, ZS; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2000Deposition of polycrystalline Si and SiGe by ultra-high vacuum chemical molecular epitaxyChen, KM; Huang, HJ; Chang, CY; Chen, LP; Huang, GW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-1998Direct oxidation of Si1-xGex layers using Vacuum-Ultra-Violet light radiation in oxygenChen, LP; Chan, YC; Chang, SJ; Huang, GW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-1998Direct oxidation of Si1-xGex layers using Vacuum-Ultra-Violet light radiation in oxygenChen, LP; Chan, YC; Chang, SJ; Huang, GW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
20-七月-2000Effect of coplanar probe pad design on noise figures of 0.35 mu m MOSFETsSu, CY; Chen, LP; Chang, SJ; Huang, GW; Ho, YP; Tseng, BM; Lin, DC; Lee, HY; Kuan, JF; Deng, YM; Chen, CL; Leu, LY; Wen, KA; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-1997Effects of isolation oxides on undercut formation and electrical characteristics for silicon selective epitaxial growthTseng, HC; Chang, CY; Pan, FM; Chen, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-1997Effects of isolation oxides on undercut formation and electrical characteristics for silicon selective epitaxial growthTseng, HC; Chang, CY; Pan, FM; Chen, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-1996Fabrication of thin film transistors by chemical mechanical polished polycrystalline silicon filmsChang, CY; Lin, HY; Lei, TF; Cheng, JY; Chen, LP; Dai, BT; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-二月-2004High nitrogen content InGaAsN/GaAs single quantum well for 1.55 mu m applications grown by molecular beam epitaxyWang, JS; Kovsh, AR; Hsiao, RS; Chen, LP; Chen, JF; Lay, TS; Chi, JY; 電子物理學系; Department of Electrophysics
1-十二月-2000Improved electrical properties of shallow p(+)-n junction using selectively grown graded Si1-xGex epitaxial structureHuang, HJ; Chen, KM; Chang, CY; Huang, TY; Chen, LP; Huang, GW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1997Interfacial abruptness in Si/SiGe heteroepitaxy grown by ultrahigh vacuum chemical vapor depositionTsai, WC; Chang, CY; Jung, TG; Chang, TC; Lin, HC; Chen, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1997Interfacial abruptness in Si/SiGe heteroepitaxy grown by ultrahigh vacuum chemical vapor depositionTsai, WC; Chang, CY; Jung, TG; Chang, TC; Lin, HC; Chen, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-1997Low temperature epitaxy of Si and Si1-xGex by utrahigh vacuum-chemical molecular epitaxyHuang, GW; Chen, LP; Chou, CT; Chen, KM; Tseng, HC; Tasi, WC; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-1996Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistorsLin, HY; Chang, CY; Lei, TF; Liu, FM; Yang, WL; Cheng, JY; Tseng, HC; Chen, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-1996Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistorsLin, HY; Chang, CY; Lei, TF; Liu, FM; Yang, WL; Cheng, JY; Tseng, HC; Chen, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2002A macro model of silicon spiral inductorSu, CY; Chen, LP; Chang, SJ; Tseng, BM; Lin, DC; Huang, GW; Ho, YP; Lee, HY; Kuan, JF; Wen, WY; Liou, P; Chen, CL; Leu, LY; Wen, KA; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-1996A novel technology to reduce the antenna charging effects during polysilicon gate electron-cyclotron-resonance etchingCheng, HC; Kang, TK; Ku, TK; Dai, BT; Chen, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
11-三月-1996Phosphorus doping of Si and Si1-xGex grown by ultrahigh vacuum chemical vapor deposition using Si2H6 and GeH4Chen, LP; Huang, GW; Chang, CY; 電控工程研究所; Institute of Electrical and Control Engineering