Fabrication of thin film transistors by chemical mechanical polished polycrystalline silicon films

標題:	Fabrication of thin film transistors by chemical mechanical polished polycrystalline silicon films
作者:	Chang, CY Lin, HY Lei, TF Cheng, JY Chen, LP Dai, BT 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	1-三月-1996
摘要:	A top-gate p-channel polycrystalline thin film transistor (TFT) has been fabricated using the polycrystalline silicon (poly-Si) film as-deposited by ultrahigh vacuum chemical vapor deposition (UHV/CVD) and polished by chemical mechanical polishing (CMP), In this process, long-term recrystallization in channel films is not needed. A maximum field effect mobility of 58 cm(2)/V-s, ON/OFF current ratio of 1.110(7), and threshold voltage of -0.54 V were obtained. The characteristics are not poor. In this work, therefore, we have demonstrated a new method to fabricate poly-Si TFT's.
URI:	http://dx.doi.org/10.1109/55.485180 http://hdl.handle.net/11536/1437
ISSN:	0741-3106
DOI:	10.1109/55.485180
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	17
Issue:	3
起始頁:	100
結束頁:	102
顯示於類別：	期刊論文

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