Fabrication of thin film transistors by chemical mechanical polished polycrystalline silicon films

doi:10.1109/55.485180

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chang, CY	en_US
dc.contributor.author	Lin, HY	en_US
dc.contributor.author	Lei, TF	en_US
dc.contributor.author	Cheng, JY	en_US
dc.contributor.author	Chen, LP	en_US
dc.contributor.author	Dai, BT	en_US
dc.date.accessioned	2014-12-08T15:02:49Z	-
dc.date.available	2014-12-08T15:02:49Z	-
dc.date.issued	1996-03-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.485180	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1437	-
dc.description.abstract	A top-gate p-channel polycrystalline thin film transistor (TFT) has been fabricated using the polycrystalline silicon (poly-Si) film as-deposited by ultrahigh vacuum chemical vapor deposition (UHV/CVD) and polished by chemical mechanical polishing (CMP), In this process, long-term recrystallization in channel films is not needed. A maximum field effect mobility of 58 cm(2)/V-s, ON/OFF current ratio of 1.110(7), and threshold voltage of -0.54 V were obtained. The characteristics are not poor. In this work, therefore, we have demonstrated a new method to fabricate poly-Si TFT's.	en_US
dc.language.iso	en_US	en_US
dc.title	Fabrication of thin film transistors by chemical mechanical polished polycrystalline silicon films	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.485180	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	17	en_US
dc.citation.issue	3	en_US
dc.citation.spage	100	en_US
dc.citation.epage	102	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1996TX68200007	-
dc.citation.woscount	29	-
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