Effect of chemical mechanical polish process on low-temperature poly-SiGe thin-film transistors

標題:	Effect of chemical mechanical polish process on low-temperature poly-SiGe thin-film transistors
作者:	Shieh, Ming-Shan Chen, Chih-Yang Hsu, Yuan-Jiun Wang, Shen-De Lei, Tan-Fu 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	2006
摘要:	The improvement of polycrystalline silicon germanium thin-film transistors (poly-SiGe TFTs) using NH(3) passivation and chemical mechanical polishing (CMP) process was examined. Experimental results indicated that NH(3) passivation could effectively improve the turn on characteristics. Moreover, the TFTs fabricated on polished poly-SiGe film exhibit: higher carrier mobility, better subthreshold swing, lower threshold voltage, and higher on/off current ratio due to the smooth poly-SiGe interface.
URI:	http://hdl.handle.net/11536/17480 http://dx.doi.org/10.1109/RELPHY.2006.251337
ISBN:	0-7803-9498-4
DOI:	10.1109/RELPHY.2006.251337
期刊:	2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL
起始頁:	711
結束頁:	712
顯示於類別：	會議論文

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