標題: | Effect of chemical mechanical polish process on low-temperature poly-SiGe thin-film transistors |
作者: | Shieh, Ming-Shan Chen, Chih-Yang Hsu, Yuan-Jiun Wang, Shen-De Lei, Tan-Fu 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2006 |
摘要: | The improvement of polycrystalline silicon germanium thin-film transistors (poly-SiGe TFTs) using NH(3) passivation and chemical mechanical polishing (CMP) process was examined. Experimental results indicated that NH(3) passivation could effectively improve the turn on characteristics. Moreover, the TFTs fabricated on polished poly-SiGe film exhibit: higher carrier mobility, better subthreshold swing, lower threshold voltage, and higher on/off current ratio due to the smooth poly-SiGe interface. |
URI: | http://hdl.handle.net/11536/17480 http://dx.doi.org/10.1109/RELPHY.2006.251337 |
ISBN: | 0-7803-9498-4 |
DOI: | 10.1109/RELPHY.2006.251337 |
期刊: | 2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL |
起始頁: | 711 |
結束頁: | 712 |
顯示於類別: | 會議論文 |