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公開日期標題作者
2005An analysis of online gaming crime characteristicsChen, YC; Chen, PS; Hwang, JJ; Korba, L; Song, R; Yee, G; 資訊管理與財務金融系 註：原資管所+財金所; Department of Information Management and Finance
1-九月-2002Characteristics of copper films deposited on H(2)-plasma-treated TaN substrate by chemical vapor depositionLin, CL; Chen, PS; Chang, CL; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2002Chemically vapor deposited Cu films on Ar-plasma-treated TiN substrateLin, CL; Chen, PS; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2006The CMP process and cleaning solution for planarization of strain-relaxed SiGe virtual substrates in MOSFET applicationsShieh, MS; Chen, PS; Tsai, MJ; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-十一月-1999Defects in Ge+-preamorphized siliconChen, PS; Hsieh, TE; Hwang, YC; Chu, CH; 材料科學與工程學系; Department of Materials Science and Engineering
1-五月-2002Effects of TaN substrate pretreatment by Ar plasma on copper chemical vapor depositionLin, CL; Chen, PS; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2002Effects of the underlayer substrates on copper chemical vapor depositionLin, CL; Chen, PS; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-1999Electrical reliability issues of integrating thin Ta and TaN barriers with Cu and low-K dielectricWu, ZC; Wang, CC; Wu, RG; Liu, YL; Chen, PS; Zhu, ZM; Chen, MC; Chen, JF; Chang, CI; Chen, LJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2005Improved inventory models with service level and lead timeChu, P; Yang, KL; Chen, PS; 工業工程與管理學系; Department of Industrial Engineering and Management
7-三月-2005Iridium(III) complexes with orthometalated quinoxaline ligands: Subtle tuning of emission to the saturated red colorHwang, FM; Chen, HY; Chen, PS; Liu, CS; Chi, Y; Shu, CF; Wu, FL; Chou, PT; Peng, SM; Lee, GH; 應用化學系; Department of Applied Chemistry
1-十月-2005A novel dynamic threshold voltage MOSFET (DTMOS) using heterostructure channel of Si1-yCy interlayerShieh, MS; Chen, PS; Tsai, MJ; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-三月-1999Removal of end-of-range defects in Ge+-pre-amorphized Si by carbon ion implantationChen, PS; Hsieh, TE; Chu, CH; 材料科學與工程學系; Department of Materials Science and Engineering
29-九月-1999Solid phase epitaxy for low pressure chemical vapor deposition Si films induced by ion implantationChen, PS; Hsieh, TE; Chu, CH; 材料科學與工程學系; Department of Materials Science and Engineering
1-七月-2003Via-filling capability of copper film by CVDLin, CL; Chen, PS; Lin, YC; Tsui, BY; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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