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公開日期標題作者
2009The Annihilation of Threading Dislocations in the Germanium Epitaxially Grown within the Silicon Nanoscale TrenchesLuo, Guang-Li; Huang, Shih-Chiang; Ko, Chih-Hsin; Wann, Clement H.; Chung, Cheng-Ting; Han, Zong-You; Cheng, Chao-Ching; Chang, Chun-Yen; Lin, Hau-Yu; Chien, Chao-Hsin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008Characteristics of atomic-layer-deposited Al(2)O(3) high-k dielectric films grown on Ge substratesCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Liu, Jun-Cheng; Kei, Chi-Chung; Liu, Da-Ren; Hsiao, Chien-Nan; Yang, Chun-Hui; Changa, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009A Comprehensive Study of Ge1-xSix on Ge for the Ge nMOSFETs with Tensile Stress, Shallow Junctions and Reduced LeakageLuo, Guang-Li; Huang, Shih-Chiang; Chung, Cheng-Ting; Heh, Dawei; Chien, Chao-Hsin; Cheng, Chao-Ching; Lee, Yao-Jen; Wu, Wen-Fa; Hsu, Chiung-Chih; Kuo, Mei-Ling; Yao, Jay-Yi; Chang, Mao-Nan; Liu, Chee-Wee; Hu, Chenming; Chang, Chun-Yen; Yang, Fu-Liang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2019Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS2 Channel Directly Grown on SiOx/Si Substrates Using Area-Selective CVD TechnologyChung, Yun-Yan; Lu, Kuan-Cheng; Cheng, Chao-Ching; Li, Ming-Yang; Lin, Chao-Ting; Li, Chi-Feng; Chen, Jyun-Hong; Lai, Tung-Yen; Li, Kai-Shin; Shieh, Jia-Min; Su, Sheng-Kai; Chiang, Hung-Li; Chen, Tzu-Chiang; Li, Lain-Jong; Wong, H-S Philip; Jian, Wen-Bin; Chien, Chao-Hsin; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-四月-2008Effects of interfacial sulfidization and thermal annealing on the electrical properties of an atomic-layer-deposited Al(2)O(3) gate dielectric on GaAs substrateCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Yang, Chun-Hui; Chang, Ching-Chih; Chang, Chun-Yen; Kei, Chi-Chung; Hsiao, Chien-Nan; Perng, Tsong-Pyng; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2009Effects of Minority-Carrier Response Behavior on Ge MOS Capacitor Characteristics: Experimental Measurements and Theoretical SimulationsCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Ling, Yu-Ting; Chang, Ruey-Dar; Kei, Chi-Chung; Hsiao, Chien-Nan; Liu, Jun-Cheng; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008Electrical and material characterization of atomic-layer-deposited Al(2)O(3) gate dielectric on ammonium sulfide treated GaAs substratesCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Chang, Ching-Chih; Kei, Chi-Chung; Yang, Chun-Hui; Hsiao, Chien-Nan; Perng, Tsong-Pyng; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2014Experimental Demonstration of (111)-Oriented GaAs Metal-Oxide-Semiconductor Field-Effect-Transistors with Hetero-Epitaxial Ge Source/DrainHan, Tsung-Yu; Luo, Guang-Li; Cheng, Chao-Ching; Ko, Chih-Hsin; Wann, Clement H.; Kei, Chi-Chung; Hsiao, Chien-Nan; Chien, Chao-Hsin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2019First demonstration of 40-nm channel length top-gate WS2 pFET using channel area-selective CVD growth directly on SiOx/Si substrateCheng, Chao-Ching; Chung, Yun-Yan; Li, Ming-Yang; Lin, Chao-Ting; Li, Chi-Feng; Chen, Jyun-Hong; Lai, Tung-Yen; Li, Kai-Shin; Shieh, Jia-Min; Su, Sheng-Kai; Chiang, Hung-Li; Chen, Tzu-Chiang; Li, Lain-Jong; Wong, H-S Philip; Chien, Chao-Hsin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2009Five-element circuit model using linear-regression method to correct the admittance measurement of metal-oxide-semiconductor capacitorCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Liu, Jun-Cheng; Chen, Yi-Cheng; Chang, Yao-Feng; Wang, Shin-Yuan; Kei, Chi-Chung; Hsiao, Chien-Nan; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010Ge Epitaxial Growth on GaAs Substrates for Application to Ge-Source/Drain GaAs MOSFETsLuo, Guang-Li; Han, Zong-You; Chien, Chao-Hsin; Ko, Chih-Hsin; Wann, Clement H.; Lin, Hau-Yu; Shen, Yi-Ling; Chung, Cheng-Ting; Huang, Shih-Chiang; Cheng, Chao-Ching; Changb, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-四月-2007High-speed GaAs metal gate semiconductor field effect transistor structure grown on a composite Ge/Ge(x)Si(1-x)/Si substrateLuo, Guang-Li; Hsieh, Yen-Chang; Chang, Edward Yi; Pilkuhn, M. H.; Chien, Chao-Hsin; Yang, Tsung-Hsi; Cheng, Chao-Ching; Chang, Chun-Yen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2010III-V MOSFETs with a New Self-Aligned ContactZhang, Xingui; Guo, Huaxin; Ko, Chih-Hsin; Wann, Clement H.; Cheng, Chao-Ching; Lin, Hau-Yu; Chin, Hock-Chun; Gong, Xiao; Lim, Phyllis Shi Ya; Luo, Guang-Li; Chang, Chun-Yen; Chien, Chao-Hsin; Han, Zong-You; Huang, Shih-Chiang; Yeo, Yee-Chia; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008Improved electrical properties of Gd2O3/GaAs capacitor with modified wet-chemical clean and sulfidization proceduresCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Tseng, Chih-Kuo; Chiang, Hsin-Che; Yang, Chun-Hui; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2009Junction and Device Characteristics of Gate-Last Ge p- and n-MOSFETs With ALD-Al(2)O(3) Gate DielectricCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Lin, Ching-Lun; Chen, Hung-Sen; Liu, Jun-Cheng; Kei, Chi-Chung; Hsiao, Chien-Nan; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2009Junction and Device Characteristics of Gate-Last Ge p- and n-MOSFETs With ALD-Al2O3 Gate DielectricCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Lin, Ching-Lun; Chen, Hung-Sen; Liu, Jun-Cheng; Kei, Chi-Chung; Hsiao, Chien-Nan; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2012Nearly Dislocation-free Ge/Si Heterostructures by Using Nanoscale Epitaxial Growth MethodLuo, Guang-Li; Ko, Chih-Hsin; Wann, Clement H.; Chung, Cheng-Ting; Han, Zong-You; Cheng, Chao-Ching; Chang, Chun-Yen; Lin, Hau-Yu; Chien, Chao-Hsin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2011Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistorsZhang, Xingui; Guo, Huaxin; Lin, Hau-Yu; Cheng, Chao-Ching; Ko, Chih-Hsin; Wann, Clement H.; Luo, Guang-Li; Chang, Chun-Yen; Chien, Chao-Hsin; Han, Zong-You; Huang, Shih-Chiang; Chin, Hock-Chun; Gong, Xiao; Koh, Shao-Ming; Lim, Phyllis Shi Ya; Yeo, Yee-Chia; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007Study of thermal stability of HfOxNy/Ge capacitors using postdeposition annealing and NH3 plasma pretreatmentCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Yang, Chun-Hui; Kuo, Mei-Ling; Lin, Je-Hung; Tseng, Chih-Kuo; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
3-七月-2006Thermochemical reaction of ZrOx(N-y) interfaces on Ge and Si substratesCheng, Chao-Ching; Chien, Chao-Hsin; Lin, Je-Hung; Chang, Chun-Yen; Luo, Guang-Li; Yang, Chun-Hui; Hsu, Shih-Lu; 電子工程學系及電子研究所; 奈米中心; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center