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1-三月-2005Designing authentication protocols for third generation mobile communication systemsCheng, SM; Shieh, SP; Yang, WH; Lee, FY; Luo, JN; 資訊工程學系; Department of Computer Science
1995Direct observation of the lateral nonuniform channel doping profile in submicron MOSFET's from an anomalous charge pumping measurement resultsChung, SS; Cheng, SM; Lee, GH; Guo, JC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
16-五月-2005An intelligent GGSN dispatching mechanism for UMTSCheng, SM; Lin, P; Tu, GH; Fu, LC; Liang, CF; 資訊工程學系; Department of Computer Science
1-十一月-1998A new approach to simulating n-MOSFET gate current degradation by including hot-electron induced oxide damageYih, CM; Cheng, SM; Chung, SS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-1998A new approach to simulating n-MOSFET gate current degradation by including hot-electron induced oxide damageYih, CM; Cheng, SM; Chung, SS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1997A new bride damage characterization technique for evaluating hot carrier reliability of flash memory cell after P/E cyclesChung, SS; Yih, CM; Cheng, SM; Liang, MS; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1-九月-1999A new technique for hot carrier reliability evaluations of flash memory cell after long-term program/erase cyclesChung, SS; Yih, CM; Cheng, SM; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2002A novel and direct determination of the interface traps in sub-100nm CMOS devices with direct tunneling regime (12 similar to 16A) gate oxideChung, SS; Chen, SJ; Yang, CK; Cheng, SM; Lin, SH; Sheng, YC; Lin, HS; Hung, KT; Wu, DY; Yew, TR; Chien, SC; Liou, FT; Wen, F; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-1997A unified approach to profiling the lateral distributions of both oxide charge and interface states in n-MOSFET's under various bias stress conditionsCheng, SM; Yih, CM; Yeh, JC; Kuo, SN; Chung, SS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-1997A unified approach to profiling the lateral distributions of both oxide charge and interface states in n-MOSFET's under various bias stress conditionsCheng, SM; Yih, CM; Yeh, JC; Kuo, SN; Chung, SS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 10 筆資料，總共 10 筆