A new bride damage characterization technique for evaluating hot carrier reliability of flash memory cell after P/E cycles

標題:	A new bride damage characterization technique for evaluating hot carrier reliability of flash memory cell after P/E cycles
作者:	Chung, SS Yih, CM Cheng, SM Liang, MS 交大名義發表電子工程學系及電子研究所 National Chiao Tung University Department of Electronics Engineering and Institute of Electronics
公開日期:	1997
URI:	http://hdl.handle.net/11536/19676
ISBN:	4-930813-75-1
期刊:	1997 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS
起始頁:	111
結束頁:	112
顯示於類別：	會議論文