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公開日期標題作者
20052-bit poly-Si-TFT nonvolatile memory using hafnium oxide, hafnium silicate and zirconium silicateLin, YH; Chien, CH; Chou, TH; Chao, TS; Chang, CY; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2006Annealing temperature effect on the performance of nonvolatile HfO2Si-oxide-nitride-oxide-silicon-type flash memoryLin, YH; Chien, CH; Chang, CY; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-八月-2005Bis(2,2-diphenylvinyl)spirobifluorene: An efficient and stable blue emitter for electroluminescence applicationsWu, FI; Shu, CF; Wang, TT; Diau, EWG; Chien, CH; Chuen, CH; Tao, Y; 應用化學系; Department of Applied Chemistry
1999Breakdown characteristics of ultra-thin gate oxides caused by plasma chargingChen, CC; Lin, HC; Chang, CY; Chien, CH; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
18-十月-2004The characteristics of hole trapping in HfO2/SiO2 gate dielectrics with TiN gate electrodeLu, WT; Lin, PC; Huang, TY; Chien, CH; Yang, MJ; Huang, IJ; Lehnen, P; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2005Characteristics of the inter-poly Al(2)O(3) dielectrics on NH(3)-nitrided bottom poly-si for next-generation flash memoriesChen, YY; Chien, CH; Lou, JC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2005Characteristics of the inter-poly Al2O3 dielectrics on NH3-nitrided bottom poly-si for next-generation flash memoriesChen, YY; Chien, CH; Lou, JC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-八月-1996Characterization of antenna effect by nondestructive gate current measurementLin, HC; Chien, CH; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-八月-1996Characterization of antenna effect by nondestructive gate current measurementLin, HC; Chien, CH; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-1999The combined effects of nitrogen implantation at S/D extension and N2O oxide on 0.18 mu m N- and P-metal oxide field effect transistors (MOSFETs)Chao, TS; Chang, SJ; Chien, CH; Lin, HC; Huang, TY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Deep sub-micron strained Si0.85Ge0.15 channel p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with ultra-thin N2O-annealed SiN gate dielectricChen, CW; Chien, CH; Chen, YC; Hsu, SL; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2001The effects of low-pressure rapid thermal post-annealing on the properties of (Ba,Sr)TiO3 thin films deposited by liquid source misted chemical depositionYang, MJ; Chien, CH; Leu, CC; Zhang, RJ; Wu, SC; Huang, TY; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Effects of low-temperature NH3 treatment on the characteristics of HfO2/SiO2 gate stackLu, WT; Chien, CH; Huang, IJ; Yang, MJ; Lehnen, P; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2000Effects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxidesChen, CC; Lin, HC; Chang, CY; Huang, TY; Chien, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2006Effects of postdeposition annealing on the characteristics of HfOxNy dielectrics on germanium and silicon substratesCheng, CC; Chien, CH; Chen, CW; Hsu, SL; Yang, CH; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-一月-1999The effects of shallow germanium halo doping on N-channel metal oxide semiconductor field effect transistorsWang, MF; Chien, CH; Chao, TS; Lin, HC; Jong, FC; Huang, TY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2004Efficient sub-nanosecond intracavity optical parametric oscillator pumped with a passively Q-switched Nd : GdVO4 laserChen, YF; Chen, SW; Tsai, LY; Chen, YC; Chien, CH; 電子物理學系; Department of Electrophysics
1-九月-2001Electrical characteristics of thin cerium oxide film on silicon substrate by reactive DC sputteringPan, TM; Chien, CH; Lei, TF; Chao, TS; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2005Electrical characteristics of thin HfO(2) gate dielectrics prepared using different pre-deposition surface treatmentsChen, CW; Chien, CH; Perng, TH; Yang, MJ; Liang, JS; Lehnen, P; Tsui, BY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2005Electrical characteristics of thin HfO2 gate dielectrics prepared using different pre-deposition surface treatmentsChen, CW; Chien, CH; Perng, TH; Yang, MJ; Liang, JS; Lehnen, P; Tsui, BY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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