標題: Characterization of antenna effect by nondestructive gate current measurement
作者: Lin, HC
Chien, CH
Huang, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: plasma;metal etching;antenna effect;damage;gate current;threshold voltage
公開日期: 15-八月-1996
摘要: A novel method is proposed for the effective characterization of plasma-charge-induced damage on thin gate oxides. We have found that the gate current measured at V-g(gate voltage) = V-th(threshold voltage) under a low drain bias (e.g., 0.1 V) is a good indicator of the damage. Since the proposed method requires only low bias voltages, it does not cause additional damage to the devices. The proposed gate current measurement is also easy to incorporate to device measurement routines without an extra stressing step, and thus provides a simple and efficient damage indicator for studying plasma-charge-induced damage.
URI: http://dx.doi.org/10.1143/JJAP.35.L1044
http://hdl.handle.net/11536/149292
ISSN: 0021-4922
DOI: 10.1143/JJAP.35.L1044
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Volume: 35
顯示於類別:期刊論文