標題: | The effects of shallow germanium halo doping on N-channel metal oxide semiconductor field effect transistors |
作者: | Wang, MF Chien, CH Chao, TS Lin, HC Jong, FC Huang, TY Chang, CY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | germanium halo implant;large-angle-tilt implant;short-channel effects;drain-induced barrier lowering;threshold-voltage lowering |
公開日期: | 15-一月-1999 |
摘要: | In this paper, we report the use of shallow germanium halo doping on improving the short-channel effects of deep submicron n-channel metal-oxide-semiconductor field effect transistors. It is demonstrated that by adding a shallow (i.e., 10 keV) germanium large-angle-tilt implant (LATID), V-th lowering in short-channel transistors is significantly improved. The improvement is found to increase with increasing germanium dose. A low germanium dose (e.g., 5 x 10(12) cm(-2)) is also found to effectively improve the drain-induced barrier lowering (DIBL) of the short-channel transistors. Our results also show that junction leakage degradation, which has been previously reported to accompany germanium implants using higher energy, can be minimized by the shallow low-dose implant used in this study. |
URI: | http://dx.doi.org/10.1143/JJAP.38.L33 http://hdl.handle.net/11536/31578 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.38.L33 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS |
Volume: | 38 |
Issue: | 1AB |
起始頁: | L33 |
結束頁: | L34 |
顯示於類別: | 期刊論文 |