Title: | The effects of shallow germanium halo doping on N-channel metal oxide semiconductor field effect transistors |
Authors: | Wang, MF Chien, CH Chao, TS Lin, HC Jong, FC Huang, TY Chang, CY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
Keywords: | germanium halo implant;large-angle-tilt implant;short-channel effects;drain-induced barrier lowering;threshold-voltage lowering |
Issue Date: | 15-Jan-1999 |
Abstract: | In this paper, we report the use of shallow germanium halo doping on improving the short-channel effects of deep submicron n-channel metal-oxide-semiconductor field effect transistors. It is demonstrated that by adding a shallow (i.e., 10 keV) germanium large-angle-tilt implant (LATID), V-th lowering in short-channel transistors is significantly improved. The improvement is found to increase with increasing germanium dose. A low germanium dose (e.g., 5 x 10(12) cm(-2)) is also found to effectively improve the drain-induced barrier lowering (DIBL) of the short-channel transistors. Our results also show that junction leakage degradation, which has been previously reported to accompany germanium implants using higher energy, can be minimized by the shallow low-dose implant used in this study. |
URI: | http://dx.doi.org/10.1143/JJAP.38.L33 http://hdl.handle.net/11536/31578 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.38.L33 |
Journal: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS |
Volume: | 38 |
Issue: | 1AB |
Begin Page: | L33 |
End Page: | L34 |
Appears in Collections: | Articles |
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