Efficient improvement of hot carrier-induced degradation for 0.1-mu m indium-halo nMOSFET

標題:	Efficient improvement of hot carrier-induced degradation for 0.1-mu m indium-halo nMOSFET
作者:	Yeh, WK Lin, JC 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	hot carrier-induced device degradation;indium halo (In-halo);post-thermal annealing (PA)
公開日期:	1-四月-2004
摘要:	The effect of post-thermal annealing after indium-halo implantation on the reliability of sub-0.1-mum nMOSFETs was investigated. We found that the control of annealing time is more efficient than that of annealing temperature with respect to improving the hot carrier-induced device degradation. The best results of device performance were obtained with post-annealing treatment performed at medium temperatures (e.g., 900 degreesC) for a longer time.
URI:	http://dx.doi.org/10.1109/TED.2004.823797 http://hdl.handle.net/11536/26889
ISSN:	0018-9383
DOI:	10.1109/TED.2004.823797
期刊:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume:	51
Issue:	4
起始頁:	642
結束頁:	644
顯示於類別：	期刊論文

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