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公開日期標題作者
20163D-TCAD Simulation Study of the Contact All Around T-FinFET Structure for 10nm Metal-Oxide-Semiconductor Field-Effect TransistorChou, Chen-Han; Hsu, Chung-Chun; Yeh, Wen-Kuan; Chung, Steve S.; Chien, Chao-Hsin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
20153D-TCAD Simulation Study of the Novel T-FinFET Structure for Sub-14nm Metal-Oxide-Semiconductor Field-Effect TransistorChou, Chen-Han; Hsu, Chung-Chun; Chung, Steve S.; Chien, Chao-Hsin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009The Annihilation of Threading Dislocations in the Germanium Epitaxially Grown within the Silicon Nanoscale TrenchesLuo, Guang-Li; Huang, Shih-Chiang; Ko, Chih-Hsin; Wann, Clement H.; Chung, Cheng-Ting; Han, Zong-You; Cheng, Chao-Ching; Chang, Chun-Yen; Lin, Hau-Yu; Chien, Chao-Hsin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2015Applying Dielectrophoresis on Silver Nanowires Alignment and Assembly to Enhance the Efficiency of Plasmonic Silicon Solar CellsLin, Ching-Chang; Wang, Szu-Yu; Lin, Wei-Ling; Lin, Ya-Lin; Cheng, Chieh; Sun, Wen-Hsien; Chen, Zhi-Long; Chien, Chao-Hsin; Ko, Fu-Hsiang; 材料科學與工程學系; 材料科學與工程學系奈米科技碩博班; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Graduate Program of Nanotechnology , Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
6-九月-2007Architecture of a n-type metal-oxide-semiconductor transistor with a compressive strained silicon-germanium channel fabricated on a silicon (110) substrateLuo, Guangli; Chien, Chao-Hsin; Yang, Tsung-Hsi; Chang, Chun-Yen
1-十二月-2012Body-Tied Germanium FinFETs Directly on a Silicon SubstrateChen, Che-Wei; Chung, Cheng-Ting; Luo, Guang-Li; Chien, Chao-Hsin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2014Body-Tied Germanium Tri-Gate Junctionless PMOSFET With In-Situ Boron Doped ChannelChen, Che-Wei; Chung, Cheng-Ting; Tzeng, Ju-Yuan; Chang, Pang-Sheng; Luo, Guang-Li; Chien, Chao-Hsin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
24-十二月-2007Cerium oxide nanocrystals for nonvolatile memory applicationsYang, Shao-Ming; Chien, Chao-Hsin; Huang, Jiun-Jia; Lei, Tan-Fu; Tsai, Ming-Jinn; Lee, Lurng-Shehng; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008Characteristics of atomic-layer-deposited Al(2)O(3) high-k dielectric films grown on Ge substratesCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Liu, Jun-Cheng; Kei, Chi-Chung; Liu, Da-Ren; Hsiao, Chien-Nan; Yang, Chun-Hui; Changa, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2012A CMOS-Compatible Poly-Si Nanowire Device with Hybrid Sensor/Memory Characteristics for System-on-Chip ApplicationsChen, Min-Cheng; Chen, Hao-Yu; Lin, Chia-Yi; Chien, Chao-Hsin; Hsieh, Tsung-Fan; Horng, Jim-Tong; Qiu, Jian-Tai; Huang, Chien-Chao; Ho, Chia-Hua; Yang, Fu-Liang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2019Comparison of the Physical and Electrical Properties of HfO2/Al2O3/HfO2/GeOx/Ge and HfO2/Al2O3/GeOx/Ge Gate StacksTsai, Yi-He; Chou, Chen-Han; Li, Hui-Hsuan; Yeh, Wen-Kuan; Lino, Yu-Hsien; Ko, Fu-Hsiang; Chien, Chao-Hsin; 材料科學與工程學系奈米科技碩博班; 電子工程學系及電子研究所; Graduate Program of Nanotechnology , Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2009A Comprehensive Study of Ge1-xSix on Ge for the Ge nMOSFETs with Tensile Stress, Shallow Junctions and Reduced LeakageLuo, Guang-Li; Huang, Shih-Chiang; Chung, Cheng-Ting; Heh, Dawei; Chien, Chao-Hsin; Cheng, Chao-Ching; Lee, Yao-Jen; Wu, Wen-Fa; Hsu, Chiung-Chih; Kuo, Mei-Ling; Yao, Jay-Yi; Chang, Mao-Nan; Liu, Chee-Wee; Hu, Chenming; Chang, Chun-Yen; Yang, Fu-Liang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2019Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS2 Channel Directly Grown on SiOx/Si Substrates Using Area-Selective CVD TechnologyChung, Yun-Yan; Lu, Kuan-Cheng; Cheng, Chao-Ching; Li, Ming-Yang; Lin, Chao-Ting; Li, Chi-Feng; Chen, Jyun-Hong; Lai, Tung-Yen; Li, Kai-Shin; Shieh, Jia-Min; Su, Sheng-Kai; Chiang, Hung-Li; Chen, Tzu-Chiang; Li, Lain-Jong; Wong, H-S Philip; Jian, Wen-Bin; Chien, Chao-Hsin; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-二月-2019Demonstration of HfO2-Based Gate Dielectric With Low Interface State Density and Sub-nm EOT on Ge by Incorporating Ti Into Interfacial LayerTsai, Yi-He; Chou, Chen-Han; Chung, Yun-Yan; Yeh, Wen-Kuan; Lin, Yu-Hsien; Ko, Fu-Hsiang; Chien, Chao-Hsin; 材料科學與工程學系; 電子工程學系及電子研究所; 奈米科技中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Center for Nanoscience and Technology
2014Effect of Mg Doping on the Electrical Characteristics of High Performance IGZO Thin Film TransistorsWu, Hung-Chi; Liu, Tung-Sheng; Chien, Chao-Hsin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2015Effect of passivation layer on InGaZnO thin-film transistors with hybrid silver nanowires as source and drain electrodesYu, Chien-Hsien; Wu, Hung-Chi; Chien, Chao-Hsin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2010The effect of pulsed laser annealing on the nickel silicide formationChen, Hou-Yu; Lin, Chia-Yi; Huang, Chien-Chao; Chien, Chao-Hsin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2008Effects of HfO(2) buffer layer thickness on the properties of Pt/SrBi(2)Ta(2)O(9)//HfO(2)/Si structureLeu, Ching-Chich; Lin, Chen-Han; Chien, Chao-Hsin; Yang, Ming-Jui; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2008Effects of HfO2 buffer layer thickness on the properties of Pt/SrBi2Ta2O9//HfO2/Si structureLeu, Ching-Chich; Lin, Chen-Han; Chien, Chao-Hsin; Yang, Ming-Jui; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2008Effects of interfacial sulfidization and thermal annealing on the electrical properties of an atomic-layer-deposited Al(2)O(3) gate dielectric on GaAs substrateCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Yang, Chun-Hui; Chang, Ching-Chih; Chang, Chun-Yen; Kei, Chi-Chung; Hsiao, Chien-Nan; Perng, Tsong-Pyng; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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