標題: | A CMOS-Compatible Poly-Si Nanowire Device with Hybrid Sensor/Memory Characteristics for System-on-Chip Applications |
作者: | Chen, Min-Cheng Chen, Hao-Yu Lin, Chia-Yi Chien, Chao-Hsin Hsieh, Tsung-Fan Horng, Jim-Tong Qiu, Jian-Tai Huang, Chien-Chao Ho, Chia-Hua Yang, Fu-Liang 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | nano-sensor fabrication;nanowire FET;nonvolatile memories;semiconductive sensors |
公開日期: | 1-四月-2012 |
摘要: | This paper reports a versatile nano-sensor technology using "top-down" poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process. The nanowire manufacturing technique reduced nanowire width scaling to 50 nm without use of extra lithography equipment, and exhibited superior device uniformity. These n type polysilicon nanowire FETs have positive pH sensitivity (100 mV/pH) and sensitive deoxyribonucleic acid (DNA) detection ability (100 pM) at normal system operation voltages. Specially designed oxide-nitride-oxide buried oxide nanowire realizes an electrically Vth-adjustable sensor to compensate device variation. These nanowire FETs also enable non-volatile memory application for a large and steady Vth adjustment window (>2 V Programming/Erasing window). The CMOS-compatible manufacturing technique of polysilicon nanowire FETs offers a possible solution for commercial System-on-Chip biosensor application, which enables portable physiology monitoring and in situ recording. |
URI: | http://hdl.handle.net/11536/16063 |
ISSN: | 1424-8220 |
期刊: | SENSORS |
Volume: | 12 |
Issue: | 4 |
結束頁: | 3952 |
顯示於類別: | 期刊論文 |