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公開日期標題作者
2004Comparison of oxide breakdown progression in ultra-thin oxide SOI and bulk pMOSFETsChan, CT; Kuo, CH; Tang, CJ; Chen, MC; Wang, TH; Lu, SH; Hu, HC; Chen, TF; Yang, CK; Lee, MT; Wu, DY; Chen, JK; Chien, SC; Sun, SW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Low leakage reliability characterization methodology for advanced CMOS with gate oxide in the 1nm rangeChung, SS; Feng, HJ; Hsieh, YS; Liu, A; Lin, WM; Chen, DF; Ho, JH; Huang, KT; Yang, CK; Cheng, O; Sheng, YC; Wu, DY; Shiau, WT; Chien, SC; Liao, K; Sun, SW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation processChan, KT; Chin, A; McAlister, SP; Chang, CY; Tseng, C; Liang, V; Chen, JK; Chien, SC; Duh, DS; Lin, WJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003The minimum noise figure and mechanism as scaling RF MOSFETs from 0.18 to 0.13 mu m technology nodesHuang, CH; Chan, KT; Chen, CY; Chin, A; Huang, GW; Tseng, C; Liang, V; Chen, JK; Chien, SC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003Negative substrate bias enhanced breakdown hardness in ultra-thin oxide pMOSFETsWang, TH; Tsai, CW; Chen, MC; Chan, CT; Chiang, HK; Lu, SH; Hu, HC; Chen, TF; Yang, CK; Lee, MT; Wu, DY; Chen, JK; Chien, SC; Sun, SW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005A new insight into the degradation mechanisms of various mobility-enhanced CMOS devices with different substrate engineeringChung, SS; Liu, YR; Wu, SJ; Lai, CS; Liu, YC; Chen, DF; Lin, HS; Shiau, WT; Tsai, CT; Chien, SC; Sun, SW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2002A novel and direct determination of the interface traps in sub-100nm CMOS devices with direct tunneling regime (12 similar to 16A) gate oxideChung, SS; Chen, SJ; Yang, CK; Cheng, SM; Lin, SH; Sheng, YC; Lin, HS; Hung, KT; Wu, DY; Yew, TR; Chien, SC; Liou, FT; Wen, F; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003Optimized noise and consistent RF model for 0.18 mu m MOSFETsHuang, CH; Li, HY; Chin, A; Liang, V; Chien, SC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulationChin, A; Chan, KT; Huang, CH; Chen, C; Liang, V; Chen, JK; Chien, SC; Sung, SW; Duh, DS; Lin, WJ; Zhu, CX; Li, MF; McAlister, SP; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-七月-2005Substrate-bias-dependent dielectric breakdown in ultrathin-oxide p-metal-oxide-semiconductor field-effect transistorsChiang, S; Lu, MF; Huang-Lu, S; Chien, SC; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 10 筆資料，總共 10 筆