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公開日期標題作者
2013Current Uniformity Improvement in Flexible Resistive MemoryZheng, Zhi-Wei; Cheng, Chun-Hu; Chou, Kun-I; Liu, Ming; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2013GeO2/PZT Resistive Random Access Memory Devices With Ni electrodeChou, Kun-I; Cheng, Chun-Hu; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
10-十二月-2012Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrodeZheng, Zhi-Wei; Cheng, Chun-Hu; Chou, Kun-I; Liu, Ming; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2013A Low Operating Voltage IGZO TFT Using LaLuO3 Gate DielectricChou, Kun-I; Hsu, Hsiao-Hsuan; Cheng, Chun-Hu; Lee, Kai-Yu; Li, Shang-Rong; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2014Performance comparison of titanium-oxide resistive switching memories using GeOx and AlOx capping layers for flexible applicationChou, Kun-I; Cheng, Chun-Hu; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2015TiO2-Based Indium Phosphide Metal-Oxide-Semiconductor Capacitor with High Capacitance DensityCheng, Chun-Hu; Hsu, Hsiao-Hsuan; Chou, Kun-I; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2011Unipolar Ni/GeOx/PbZr0.5Ti0.5O3/TaN Resistive Switching MemoryChou, Kun-I; Cheng, Chun-Hu; Chen, Po-Chun; Yeh, Fon-Shan; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 7 筆資料，總共 7 筆