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公開日期標題作者
1-一月-2018Effects of Electric Fields on the Switching Properties Improvements of RRAM Device With a Field-Enhanced Elevated-Film-Stack StructureChuang, Kai-Chi; Lin, Kuan-Yu; Luo, Jun-Dao; Li, Wei-Shuo; Li, Yi-Shao; Chu, Chi-Yan; Cheng, Huang-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2017Effects of post-metal annealing on the electrical characteristics of HfOx-based resistive switching memory devicesChuang, Kai-Chi; Lin, Kuan-Yu; Luo, Jun-Dao; Li, Wei-Shuo; Li, Yi-Shao; Chu, Chi-Yan; Cheng, Huang-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2018Impact of AlOx layer on resistive switching characteristics and device-to-device uniformity of bilayered HfOx-based resistive random access memory devicesChuang, Kai-Chi; Chung, Hao-Tung; Chu, Chi-Yan; Luo, Jun-Dao; Li, Wei-Shuo; Li, Yi-Shao; Cheng, Huang-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2019Impact of the Stacking Order of HfOX and AlOX Dielectric Films on RRAM Switching Mechanisms to Behave Digital Resistive Switching and Synaptic CharacteristicsChuang, Kai-Chi; Chu, Chi-Yan; Zhang, He-Xin; Luo, Jun-Dao; Li, Wei-Shuo; Cheng, Huang-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2017雙層介電質薄膜之電阻式記憶體之研究朱治印; 鄭晃忠; Chu, Chi-Yan; Cheng, Huang-Chung; 電子研究所
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