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公開日期標題作者
七月-2016Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN (X) Schottky Metal Structures for High-Power ApplicationsHsieh, Ting-En; Lin, Yueh-Chin; Chu, Chung-Ming; Chuang, Yu-Lin; Huang, Yu-Xiang; Shi, Wang-Cheng; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Lee, Wei-I; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子物理學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
13-十二月-2014The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodesTsai, Ming-Ta; Chu, Chung-Ming; Huang, Che-Hsuan; Wu, Yin-Hao; Chiu, Ching-Hsueh; Li, Zhen-Yu; Tu, Po-Min; Lee, Wei-I; Kuo, Hao-Chung; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
二月-2016The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD MethodHuang, Wei-Ching; Chu, Chung-Ming; Hsieh, Chi-Feng; Wong, Yuen-Yee; Chen, Kai-Wei; Lee, Wei-I; Tu, Yung-Yi; Chang, Edward-Yi; Dee, Chang Fu; Majlis, B. Y.; Yap, S. L.; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
四月-2016Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperaturesHuang, Wei-Ching; Chu, Chung-Ming; Wong, Yuen Yee; Chen, Kai-Wei; Lin, Yen-Ku; Wu, Chia-Hsun; Lee, Wei-I; Chang, Edward-Yi; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
二月-2016Reliability study of high-k La2O3/HfO2 and HfO2/La2O3 stacking layers on n-In0.53Ga0.47As metal-oxide-semiconductor capacitorChu, Chung-Ming; Lin, Yueh-Chin; Lee, Wei-I; Dee, Chang Fu; Wong, Yuen-Yee; Majlis, Burhanuddin Yeop; Salleh, Muhamad Mat; Yap, Seong Ling; Chang, Edward Yi; 材料科學與工程學系; 電子物理學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-八月-2013A Simple Growth Method to Produce a-Plane GaN Thick Films by Hydride Vapor Phase EpitaxyWu, Yin-Hao; Lee, Chuo-Han; Chu, Chung-Ming; Yeh, Yen-Hsien; Chen, Chan-Lin; Lee, Wei-I; 電子物理學系; Department of Electrophysics
1-八月-2015Use of hydrogen etching to remove existing dislocations in GaN epitaxial layersYeh, Yen-Hsien; Chu, Chung-Ming; Wu, Yin-Hao; Hsu, Ying-Chia; Yu, Tzu-Yi; Lee, Wei-I; 電子物理學系; Department of Electrophysics
2017複合高介電係數閘極介電層在三五族半導體中之缺陷特性及其可靠度研究曲崇銘; 李威儀; Chu, Chung-Ming; Lee, Wei-I; 電子物理系所
顯示 1 到 8 筆資料，總共 8 筆