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1-二月-2012A Comparative Study of NBTI and RTN Amplitude Distributions in High-kappa Gate Dielectric pMOSFETsChiu, J. P.; Chung, Y. T.; Wang, Tahui; Chen, Min-Cheng; Lu, C. Y.; Yu, K. F.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2016Investigation of Factors Affecting SET-Disturb Failure Time in a Resistive Switching MemorySu, P. C.; Chung, Y. T.; Chen, M. C.; Wang, Tahui; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2014Investigation of Random Telegraph Noise Amplitudes in Hafnium Oxide Resistive Memory DevicesChung, Y. T.; Liu, Y. H.; Su, P. C.; Cheng, Y. H.; Wang, Tahui; Chen, M. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2011Variations of V(t) Retention Loss in a SONOS Flash Memory Due to a Current-Path Percolation EffectChou, Y. L.; Chung, Y. T.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2011Variations of V-t Retention Loss in a SONOS Flash Memory Due to a Current-Path Percolation EffectChou, Y. L.; Chung, Y. T.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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