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公開日期標題作者
27-十月-2003Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiN(x) interlayer in n-GaN layersTu, RC; Chuo, CC; Pan, SM; Fan, YM; Tsai, CE; Wang, TC; Tun, CJ; Chi, GC; Lee, BC; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
27-十月-2003Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layersTu, RC; Chuo, CC; Pan, SM; Fan, YM; Tsai, CE; Wang, TC; Tun, CJ; Chi, GC; Lee, BC; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Performance of AlGaN/GaN heterostrucrure FETs over temperaturesLee, CC; Shih, CF; Lee, CP; Tu, RC; Chuo, CC; Chi, J; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-一月-2006Quaternary AlInGaN multiple quantum well 368 nm light-emitting diodeWang, TC; Kuo, HC; Lee, ZH; Chuo, CC; Tsai, MY; Tsai, CE; Lee, TD; Lu, TC; Chi, J; 光電工程學系; Department of Photonics
1-六月-2004Temperature-dependent electron transport properties of AlGaN/GaN heterostructuresLee, CC; Shih, CF; Lee, CP; Tu, RC; Chuo, CC; Chi, J; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-二月-2004Ultra-high-density InGaN quantum dots grown by metalorganic chemical vapor depositionTu, RC; Tun, CJ; Chuo, CC; Lee, BC; Tsai, CE; Wang, TC; Chi, J; Lee, CP; Chi, GC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 6 筆資料，總共 6 筆