標題: | Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers |
作者: | Tu, RC Chuo, CC Pan, SM Fan, YM Tsai, CE Wang, TC Tun, CJ Chi, GC Lee, BC Lee, CP 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 27-十月-2003 |
摘要: | Near-ultraviolet 400-nm InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with and without an in situ rough SiNx interlayer inserted into the n-GaN underlying layer were grown on c-face sapphire substrates by metalorganic vapor phase epitaxy. Inserting the SiNx interlayer into the n-GaN underlying layer slightly reduced leakage current induced by reducing the defect density. Additionally, an enhancement of light extraction for the LED with a SiNx interlayer is expected because of the increased intensity of light scattered on the SiNx nanomask, changing the directions of propagation of light. Consequently, the emission efficiency of an LED with an in situ rough SiNx interlayer doubles that without a SiNx interlayer. (C) 2003 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.1622441 http://hdl.handle.net/11536/148590 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.1622441 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 83 |
起始頁: | 3608 |
結束頁: | 3610 |
顯示於類別: | 期刊論文 |