標題: Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers
作者: Tu, RC
Chuo, CC
Pan, SM
Fan, YM
Tsai, CE
Wang, TC
Tun, CJ
Chi, GC
Lee, BC
Lee, CP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 27-Oct-2003
摘要: Near-ultraviolet 400-nm InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with and without an in situ rough SiNx interlayer inserted into the n-GaN underlying layer were grown on c-face sapphire substrates by metalorganic vapor phase epitaxy. Inserting the SiNx interlayer into the n-GaN underlying layer slightly reduced leakage current induced by reducing the defect density. Additionally, an enhancement of light extraction for the LED with a SiNx interlayer is expected because of the increased intensity of light scattered on the SiNx nanomask, changing the directions of propagation of light. Consequently, the emission efficiency of an LED with an in situ rough SiNx interlayer doubles that without a SiNx interlayer. (C) 2003 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1622441
http://hdl.handle.net/11536/148590
ISSN: 0003-6951
DOI: 10.1063/1.1622441
期刊: APPLIED PHYSICS LETTERS
Volume: 83
起始頁: 3608
結束頁: 3610
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