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公開日期標題作者
6-六月-2018Analysis of Leakage Current Mechanism for Ni/Au Schottky Contact on InAlGaN/GaN HEMTLumbantoruan, Franky; Wu, Chia-Hsun; Zheng, Xia-Xi; Singh, Sankalp K.; Dee, Chang-Fu; Majlis, Burhanuddin Y.; Chang, Edward-Yi; 材料科學與工程學系; 國際半導體學院; Department of Materials Science and Engineering; International College of Semiconductor Technology
七月-2016Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN (X) Schottky Metal Structures for High-Power ApplicationsHsieh, Ting-En; Lin, Yueh-Chin; Chu, Chung-Ming; Chuang, Yu-Lin; Huang, Yu-Xiang; Shi, Wang-Cheng; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Lee, Wei-I; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子物理學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-一月-2019Crystal structure control of Au-free InAs and InAs/GaSb heterostucture nanowires grown on Si (111) by metal-organic chemical vapor depositionKakkerla, Ramesh Kumar; Anandan, Deepak; Singh, Sankalp Kumar; Yu, Hung Wei; Lee, Ching-Ting; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1-五月-2017Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTsLiu, Shih-Chien; Huang, Chung-Kai; Chang, Chia-Hua; Lin, Yueh-Chin; Chen, Bo-Yuan; Tsai, Szu-Ping; Majlis, Burhanuddin Yeop; Dee, Chang-Fu; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
一月-2016Effective surface treatment for GaN metal-insulator-semiconductor high-electron-mobility transistors using HF plus N-2 plasma prior to SiN passivationLiu, Shih-Chien; Trinh, Hai-Dang; Dai, Gu-Ming; Huang, Chung-Kai; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Biswas, Dhrubes; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-一月-2016Effective surface treatment for GaN metal-insulator-semiconductor high-electron-mobility transistors using HF plus N-2 plasma prior to SiN passivationLiu, Shih-Chien; Trinh, Hai-Dang; Dai, Gu-Ming; Huang, Chung-Kai; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Biswas, Dhrubes; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-七月-2013Formation of a Multi-Arm Branched Nanorod of ZnO on the Si Surface via a Nanoseed-Induced Polytypic Crystal Growth Using the Hydrothermal MethodTan, Sin Tee; Umar, Akrajas Ali; Yahaya, Muhammad; Salleh, Muhamad Mat; Yap, Chi Chin; Hong-Quan Nguyen; Dee, Chang-Fu; Chang, Edward Yi; Oyama, Munetaka; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2014Hydrothermal growth of ZnO nanotubes on InGaP/GaAs/Ge Solar CellsChung, Chen-Chen; Lin, Kung-Liang; Yu, Hung-Wei; Quan, Nguyen-Hong; Dee, Chang-Fu; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2012Influence of post deposition annealing temperatures on electrical properties of Al2O3/InSb MOSCAPsHai-Dang Trinh; Lin, Yue-Chin; Chang, Edward Yi; Hong-Quan Nguyen; Wang, Shin-Yuan; Wong, Yuen-Yee; Binh-Tinh Tran; Quang-Ho Luc; Chi-Lang Nguyen; Dee, Chang-Fu; 材料科學與工程學系; Department of Materials Science and Engineering
7-十月-2013Low resistance copper-based ohmic contact for AlGaN/GaN high electron mobility transistorsWong, Yuen-Yee; Chen, Yu-Kong; Maa, Jer-Shen; Yu, Hung-Wei; Tu, Yung-Yi; Dee, Chang-Fu; Yap, Chi-Chin; Chang, Edward Yi; 材料科學與工程學系; 照明與能源光電研究所; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Institute of Lighting and Energy Photonics; Department of Electronics Engineering and Institute of Electronics
1-八月-2019Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 m Omega center dot cm(2) Specific On-Resistance for Power Device ApplicationsWu, Chia-Hsun; Chen, Jian-You; Han, Ping-Cheng; Lee, Ming-Wen; Yang, Kun-Sheng; Wang, Huan-Chung; Chang, Po-Chun; Luc, Quang Ho; Lin, Yueh-Chin; Dee, Chang-Fu; Hamzah, Azrul Azlan; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
15-六月-2017A rapid responding ultraviolet sensor based on multi-parallel aligned ZnO nanowires field effect transistorTiong, Teck-Yaw; Dee, Chang-Fu; Hamzah, Azrul Azlan; Goh, Boon Tong; Wong, Yuan-Yee; Ooi, Lia; Majlis, Burhanuddin Yeop; Salleh, Muhamad Mat; Ahmad, Ishaq; 材料科學與工程學系; Department of Materials Science and Engineering
1-五月-2012Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In0.5Ga0.5As and In0.3Ga0.7As on GaAs Substrate by Using Metal Organic Chemical Vapor DepositionHong-Quan Nguyen; Chang, Edward Yi; Yu, Hung-Wei; Hai-Dang Trinh; Dee, Chang-Fu; Wong, Yuen-Yee; Hsu, Ching-Hsiang; Binh-Tinh Tran; Chung, Chen-Chen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 13 筆資料，總共 13 筆