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公開日期標題作者
18-九月-1995EFFECTS OF COLUMN-III ALKYL SOURCES ON DEEP LEVELS IN GAN GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXYLEE, WI; HUANG, TC; GUO, JD; FENG, MS; 材料科學與工程學系; 電子物理學系; 電子與資訊研究中心; Department of Materials Science and Engineering; Department of Electrophysics; Microelectronics and Information Systems Research Center
18-九月-1995EFFECTS OF COLUMN-III ALKYL SOURCES ON DEEP LEVELS IN GAN GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXYLEE, WI; HUANG, TC; GUO, JD; FENG, MS; 材料科學與工程學系; 電子物理學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electrophysics; D Link NCTU Joint Res Ctr
1-十月-1995RAMAN-SCATTERING OF SE-DOPED GALLIUM NITRIDE FILMSKUO, HR; FENG, MS; GUO, JD; LEE, MC; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
1-十月-1995SE-DOPED GAN FILMS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITIONGUO, JD; FENG, MS; PAN, FM; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
30-十月-1995STUDY OF SCHOTTKY BARRIERS ON N-TYPE GAN GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITIONGUO, JD; FENG, MS; GUO, RJ; PAN, FM; CHANG, CY; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
30-十月-1995STUDY OF SCHOTTKY BARRIERS ON N-TYPE GAN GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITIONGUO, JD; FENG, MS; GUO, RJ; PAN, FM; CHANG, CY; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 6 筆資料，總共 6 筆