國立陽明交通大學機構典藏：瀏覽交通大學機構典藏

瀏覽的方式：作者 Guo, XJ

顯示 1 到 9 筆資料，總共 9 筆

公開日期	標題	作者
6-十一月-2000	Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dots	Wang, JS; Chen, JF; Huang, JL; Wang, PY; Guo, XJ; 電子物理學系; Department of Electrophysics
1-九月-2005	Effect of substrate orientation on arsenic precipitation in low-temperature-grown GaAs	Lee, WN; Chen, YF; Huang, JH; Guo, XJ; Kuo, CT; 材料科學與工程學系; Department of Materials Science and Engineering
1-十月-2005	Effects of annealing on magnetic properties of new ferromagnetic semiconductor (In, Al, Mn) As	Chen, YF; Lee, WN; Huang, JH; Chin, TS; Guo, XJ; Ku, HC; 材料科學與工程學系; Department of Materials Science and Engineering
1-十一月-2005	Effects of doping type and concentration on precipitation of nanometer arsenic clusters in low-temperature-grown GaAs	Lee, WN; Chen, YF; Huang, JH; Guo, XJ; Kuo, CT; 材料科學與工程學系; Department of Materials Science and Engineering
11-一月-2006	(In0.52Al0.48)(1-x)MnxAs muted magnetic semiconductor grown on InP substrates	Lee, WN; Chen, YF; Huang, JH; Guo, XJ; Kuo, CT; Chin, TS; Ku, HC; 材料科學與工程學系; Department of Materials Science and Engineering
1-四月-2006	MBE growth and structural and magnetic properties of (In1-gamma Al gamma)(1-x)MnxAs-diluted magnetic semiconductors	Lee, WN; Chen, YF; Huang, JH; Guo, XJ; Kuo, CT; Ku, HC; 材料科學與工程學系; Department of Materials Science and Engineering
1-十一月-1997	The microstructure of As precipitates in Si delta-doped GaAs grown by low-temperature molecular beam epitaxy	Hsieh, LZ; Huang, JH; Su, ZA; Guo, XJ; Shih, HC; Wu, MCY; 電子物理學系; Department of Electrophysics
1-十一月-1997	The microstructure of As precipitates in Si delta-doped GaAs grown by low-temperature molecular beam epitaxy	Hsieh, LZ; Huang, JH; Su, ZA; Guo, XJ; Shih, HC; Wu, MCY; 電子物理學系; Department of Electrophysics
1-二月-2000	Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence	Chen, JF; Wang, PY; Wang, JS; Chen, NC; Guo, XJ; Chen, YF; 電子物理學系; Department of Electrophysics

顯示 1 到 9 筆資料，總共 9 筆