標題: | MBE growth and structural and magnetic properties of (In1-gamma Al gamma)(1-x)MnxAs-diluted magnetic semiconductors |
作者: | Lee, WN Chen, YF Huang, JH Guo, XJ Kuo, CT Ku, HC 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | MBE;(In;Al;Mn) As;diluted ferrornagnetic semiconductor |
公開日期: | 1-四月-2006 |
摘要: | A series of quaternary-diluted magnetic semiconductors, (In1-y,Al-y)(1-x)MnxAs, have been successfully grown on InP substrates by low-temperature molecular beam epitaxy. The (ln(0.52)Al(0.48))(1-x)MnxAs with x <= 0.11 were grown on a nearly lattice-matched In0.52Al0.48As buffer, while the (In1-y,Al-y)(1-x)MnxAs with a higher Mn content of 0.11 < x <= 0.18 were grown on a graded 3-layer In,-,,Al-y 'As buffer structure. The results of transmission electron microscopy and double-crystal X-ray diffraction reveal that all (In1-yAly)(1-x),Mn,As epilayers are single crystal with zincblende structure, and the lattice constant increases with increasing the Mn content. The magnetic measurements show that the (In1-y,Al-y)(1-x)MnxAs semiconductors exhibit a paramagnetic-like state for x <= 0.05 while a ferromagnetic state for x >= 0.05, and the Curie temperature of ferromagnetic (In1-yAly)(1-x) MnxAs increases with increasing Mn content. (c) 2006 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.jcrysgro.2005.12.085 http://hdl.handle.net/11536/12424 |
ISSN: | 0022-0248 |
DOI: | 10.1016/j.jcrysgro.2005.12.085 |
期刊: | JOURNAL OF CRYSTAL GROWTH |
Volume: | 289 |
Issue: | 2 |
起始頁: | 502 |
結束頁: | 505 |
顯示於類別: | 期刊論文 |