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公開日期標題作者
1-六月-2013Band Alignment Parameters of Al2O3/InSb Metal-Oxide-Semiconductor Structure and Their Modification with Oxide Deposition TemperaturesHai Dang Trinh; Minh Thuy Nguyen; Lin, Yueh Chin; Quoc Van Duong; Hong Quan Nguyen; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-九月-2012C-V characteristics of epitaxial germanium metal-oxide-semiconductor capacitor on GaAs substrate with ALD Al2O3 dielectricTang, Shih Hsuan; Kuo, Chien I.; Hai Dang Trinh; Hudait, Mantu; Chang, Edward Yi; Hsu, Ching Yi; Su, Yung Hsuan; Luo, Guang-Li; Hong Quan Nguyen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-五月-2013Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing TemperaturesHai Dang Trinh; Lin, Yueh Chin; Chang, Edward Yi; Lee, Ching-Ting; Wang, Shin-Yuan; Hong Quan Nguyen; Chiu, Yu Sheng; Quang Ho Luc; Chang, Hui-Chen; Lin, Chun-Hsiung; Jang, Simon; Diaz, Carlos H.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-八月-2014Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation LayerQuang Ho Luc; Chang, Edward Yi; Hai Dang Trinh; Lin, Yueh Chin; Hong Quan Nguyen; Wong, Yuen Yee; Huy Binh Do; Salahuddin, Sayeef; Hu, Chenming Calvin; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
1-一月-2012The Growth and Fabrication of High-Performance In0.5Ga0.5As Metal-Oxide-Semiconductor Capacitor on GaAs Substrate by Metalorganic Chemical Vapor Deposition Method.Hong Quan Nguyen; Hai Dang Trinh; Yu, Hung Wei; Hsu, Ching Hsiang; Chung, Chen Chen; Binh Tinh Tran; Wong, Yuen Yee; Thanh Hoa Phan Van; Quang Ho Luc; Chiou, Diao Yuan; Chi Lang Nguyen; Dee, Chang Fu; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
2012The integration of Ge and III-V materials on GaAs and Si for Post CMOS applicationsChang, Edward Yi; Chang, Chia Hua; Tang, Shih Hsuan; Hai Dang Trinh; Kuo, Chien I.; Hsu, Ching Yi; Su, Yung Hsuan; 材料科學與工程學系; Department of Materials Science and Engineering
顯示 1 到 6 筆資料，總共 6 筆