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Showing results 1 to 10 of 10
Issue DateTitleAuthor(s)
1-Jun-2013Band Alignment Parameters of Al2O3/InSb Metal-Oxide-Semiconductor Structure and Their Modification with Oxide Deposition TemperaturesHai Dang Trinh; Minh Thuy Nguyen; Lin, Yueh Chin; Quoc Van Duong; Hong Quan Nguyen; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Sep-2012C-V characteristics of epitaxial germanium metal-oxide-semiconductor capacitor on GaAs substrate with ALD Al2O3 dielectricTang, Shih Hsuan; Kuo, Chien I.; Hai Dang Trinh; Hudait, Mantu; Chang, Edward Yi; Hsu, Ching Yi; Su, Yung Hsuan; Luo, Guang-Li; Hong Quan Nguyen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-May-2013Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing TemperaturesHai Dang Trinh; Lin, Yueh Chin; Chang, Edward Yi; Lee, Ching-Ting; Wang, Shin-Yuan; Hong Quan Nguyen; Chiu, Yu Sheng; Quang Ho Luc; Chang, Hui-Chen; Lin, Chun-Hsiung; Jang, Simon; Diaz, Carlos H.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Aug-2014Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation LayerQuang Ho Luc; Chang, Edward Yi; Hai Dang Trinh; Lin, Yueh Chin; Hong Quan Nguyen; Wong, Yuen Yee; Huy Binh Do; Salahuddin, Sayeef; Hu, Chenming Calvin; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
1-Dec-2014Gold-Free Fully Cu-Metallized InGaP/InGaAs/Ge Triple-Junction Solar CellsHsu, Ching-Hsiang; Chang, Edward Yi; Chang, Hsun-Jui; Yu, Hung-Wei; Hong Quan Nguyen; Chung, Chen-Chen; Maa, Jer-Shen; Pande, Krishna; 材料科學與工程學系; 照明與能源光電研究所; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Institute of Lighting and Energy Photonics; Department of Electronics Engineering and Institute of Electronics
1-Jan-2012The Growth and Fabrication of High-Performance In0.5Ga0.5As Metal-Oxide-Semiconductor Capacitor on GaAs Substrate by Metalorganic Chemical Vapor Deposition Method.Hong Quan Nguyen; Hai Dang Trinh; Yu, Hung Wei; Hsu, Ching Hsiang; Chung, Chen Chen; Binh Tinh Tran; Wong, Yuen Yee; Thanh Hoa Phan Van; Quang Ho Luc; Chiou, Diao Yuan; Chi Lang Nguyen; Dee, Chang Fu; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jul-2011High-Quality 1 eV In(0.3)Ga(0.7)As on GaAs Substrate by Metalorganic Chemical Vapor Deposition for Inverted Metamorphic Solar Cell ApplicationHong Quan Nguyen; Chang, Edward Yi; Yu, Hung Wei; Lin, Kung Liang; Chung, Chen Chen; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jul-2011High-Quality 1 eV In0.3Ga0.7As on GaAs Substrate by Metalorganic Chemical Vapor Deposition for Inverted Metamorphic Solar Cell ApplicationHong Quan Nguyen; Chang, Edward Yi; Yu, Hung Wei; Lin, Kung Liang; Chung, Chen Chen; 材料科學與工程學系; Department of Materials Science and Engineering
1-Aug-2012InGaP/GaAs Dual-Junction Solar Cell with AlGaAs/GaAs Tunnel Diode Grown on 10 degrees off Misoriented GaAs SubstrateYu, Hung Wei; Chung, Chen Chen; Wang, Chin Te; Hong Quan Nguyen; Binh Tinh Tran; Lin, Kung Liang; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Jan-2014Porous (001)-faceted Zn-doped anatase TiO2 nanowalls and their heterogeneous photocatalytic characterizationSaad, Siti Khatijah Md; Umar, Akrajas Ali; Hong Quan Nguyen; Dee, Chang Fu; Salleh, Muhamad Mat; Oyama, Munetaka; 材料科學與工程學系; Department of Materials Science and Engineering
Showing results 1 to 10 of 10