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公開日期標題作者
1-四月-2010Asymmetric gate capacitance and dynamic characteristic fluctuations in 16 nm bulk MOSFETs due to random distribution of discrete dopantsLee, Kuo-Fu; Li, Yiming; Hwang, Chih-Hong; 電子工程學系及電子研究所; 電信工程研究所; Department of Electronics Engineering and Institute of Electronics; Institute of Communications Engineering
1-四月-2010Asymmetric gate capacitance and dynamic characteristic fluctuations in 16 nm bulk MOSFETs due to random distribution of discrete dopantsLee, Kuo-Fu; Li, Yiming; Hwang, Chih-Hong; 傳播研究所; 電機工程學系; Institute of Communication Studies; Department of Electrical and Computer Engineering
2008Asymmetric Gate Capacitance and High Frequency Characteristic Fluctuations in 16 nm Bulk MOSFETs Due to Random Distribution of Discrete DopantsLi, Yiming; Hwang, Chih-Hong; Yeh, Ta-Ching; 電信工程研究所; Institute of Communications Engineering
2007Characteristic fluctuation dependence on discrete dopant for 16nm SOI FinFETs at different temperatureLi, Yiming; Hwang, Chih-Hong; Yu, Shao-Ming; Huang, Hsuan-Ming; Yeh, Ta-Ching; Cheng, Hui-Wen; Chen, Hung-Ming; Hwang, Jiunn-Ren; Yang, Fu-Liang; 電信工程研究所; Institute of Communications Engineering
2009Characteristics Variability of Novel Lateral Asymmetry Nano-MOSFETs due to Random Discrete DopantLee, Kou-Fu; Hwang, Chih-Hong; Li, Tien-Yeh; Li, Yiming; 電信工程研究所; Institute of Communications Engineering
2008Comprehensive Examination of Threshold Voltage Fluctuations in Nanoscale Planar MOSFET and Bulk FinFET DevicesHwang, Chih-Hong; Cheng, Hui-Wen; Yeh, Ta-Ching; Li, Tien-Yeh; Huang, Hsuan-Ming; Li, Yiming; 電信工程研究所; Institute of Communications Engineering
1-四月-2009DC baseband and high-frequency characteristics of a silicon nanowire field effect transistor circuitLi, Yiming; Hwang, Chih-Hong; 電信工程研究所; Institute of Communications Engineering
2007Discrete Dopant Induced Characteristic Fluctuations in 16nm Multiple-Gate SOI DevicesLi, Yiming; Hwang, Chih-Hong; Huang, Hsuan-Ming; Yeh, Ta-Ching; 電信工程研究所; Institute of Communications Engineering
2007Discrete Dopant Induced Electrical and Thermal Fluctuation in Nanoscale SOI FinFETLi, Yiming; Hwang, Chih-Hong; Yu, Shao-Ming; Huang, Hsuan-Ming; 電信工程研究所; Institute of Communications Engineering
1-四月-2008Discrete-dopant-fluctuated threshold voltage roll-off in sub-16 nm bulk fin-type field effect transistorsLi, Yiming; Hwang, Chih-Hong; 電信工程研究所; Institute of Communications Engineering
1-四月-2009Discrete-Dopant-Fluctuated Transient Behavior and Variability Suppression in 16-nm-Gate Complementary Metal-Oxide-Semiconductor Field-Effect TransistorsLi, Yiming; Hwang, Chih-Hong; Cheng, Hui-Wen; 電信工程研究所; Institute of Communications Engineering
15-十月-2007Discrete-dopant-induced characteristic fluctuations in 16 nm multiple-gate silicon-on-insulator devicesLi, Yiming; Hwang, Chih-Hong; 電信工程研究所; Institute of Communications Engineering
2010Discrete-Dopant-Induced Power-Delay Characteristic Fluctuation in 16 nm Complementary Metal-Oxide-Semiconductor with High Dielectric Constant MaterialHan, Ming-Hung; Li, Yiming; Hwang, Chih-Hong; 傳播研究所; 電機工程學系; Institute of Communication Studies; Department of Electrical and Computer Engineering
1-五月-2009Discrete-Dopant-Induced Timing Fluctuation and Suppression in Nanoscale CMOS CircuitLi, Yiming; Hwang, Chih-Hong; Li, Tien-Yeh; 電信工程研究所; Institute of Communications Engineering
1-十月-2009Doping profile and Ge-dose optimization for silicon-germanium heterojunction bipolar transistorsLi, Yiming; Chen, Ying-Chieh; Hwang, Chih-Hong; 傳播研究所; 電子工程學系及電子研究所; Institute of Communication Studies; Department of Electronics Engineering and Institute of Electronics
1-十二月-2007Effect of fin angle on electrical characteristics of nanoscale round-top-gate bulk FinFETsLi, Yiming; Hwang, Chih-Hong; 電信工程研究所; Institute of Communications Engineering
1-三月-2012Effect of Flash Lamp Annealing and Laser Spike Annealing on Random Dopant Fluctuation of 15-nm Metal-Oxide-Semiconductor DevicesCheng, Hui-Wen; Hwang, Chih-Hong; Chao, Ko-An; Li, Yiming; 材料科學與工程學系; Department of Materials Science and Engineering
2009Effect of Process Variation on 15-nm-Gate Stacked Multichannel Surrounding-Gate Field Effect TransistorHan, Ming-Hung; Cheng, Hui-Wen; Hwang, Chih-Hong; Li, Yiming; 傳播研究所; Institute of Communication Studies
2007Effect of Single Grain Boundary Position on Surrounding-Gate Polysilicon Thin Film TransistorsLi, Yiming; Huang, Jung Y.; Lee, Bo-Shian; Hwang, Chih-Hong; 電信工程研究所; Institute of Communications Engineering
1-九月-2009The effect of the geometry aspect ratio on the silicon ellipse-shaped surrounding-gate field-effect transistor and circuitLi, Yiming; Hwang, Chih-Hong; 傳播研究所; 電子工程學系及電子研究所; Institute of Communication Studies; Department of Electronics Engineering and Institute of Electronics
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