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顯示 1 到 6 筆資料，總共 6 筆
公開日期標題作者
2007Characteristic fluctuation dependence on discrete dopant for 16nm SOI FinFETs at different temperatureLi, Yiming; Hwang, Chih-Hong; Yu, Shao-Ming; Huang, Hsuan-Ming; Yeh, Ta-Ching; Cheng, Hui-Wen; Chen, Hung-Ming; Hwang, Jiunn-Ren; Yang, Fu-Liang; 電信工程研究所; Institute of Communications Engineering
2007Discrete dopant fluctuated 20nm/15nm-gate planar CMOSYang, Fu-Liang; Hwang, Jiunn-Ren; Chen, Hung-Ming; Shen, Jeng-Jung; Yu, Shao-Ming; Li, Yiming; Tang, Denny D.; 電信工程研究所; Institute of Communications Engineering
1-六月-2008Discrete dopant fluctuations in 20-nm/15-nm-gate planar CMOSLi, Yiming; Yu, Shao-Ming; Hwang, Jiunn-Ren; Yang, Fu-Liang; 資訊工程學系; 電信工程研究所; Department of Computer Science; Institute of Communications Engineering
2006Electrical characteristic fluctuations in sub-45nm CMOS devicesYang, Fu-Liang; Hwang, Jiunn-Ren; Li, Yiming; 電信工程研究所; Institute of Communications Engineering
2007Novel strained CMOS devices with STI stress buffer layersChen, Hung-Ming; Hwang, Jiunn-Ren; Li, Yiming; Yang, Fu-Liang; 電信工程研究所; Institute of Communications Engineering
1-四月-2008Strained CMOS devices with shallow-trench-isolation stress buffer layersLi, Yiming; Chen, Hung-Ming; Yu, Shao-Ming; Hwang, Jiunn-Ren; Yang, Fu-Liang; 資訊工程學系; 電信工程研究所; Department of Computer Science; Institute of Communications Engineering
顯示 1 到 6 筆資料，總共 6 筆