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顯示 1 到 16 筆資料，總共 16 筆
公開日期標題作者
1-一月-2010An Al(2)O(3) AlGaAs/InGaAs Metal-Oxide-Semiconductor PHEMT SPDT Switch with Low Control Currents for Wireless Communication ApplicationsWu, Yun-Chi; Lin, Yueh-Chin; Chang, Edward Yi; Lee, C. T.; Kei, Chi-Chung; Chang, Chia-Ta; Hsu, H. T.; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2010An Al2O3 AlGaAs/InGaAs Metal-Oxide-Semiconductor PHEMT SPDT Switch with Low Control Currents for Wireless Communication ApplicationsWu, Yun-Chi; Lin, Yueh-Chin; Chang, Edward Yi; Lee, C. T.; Kei, Chi-Chung; Chang, Chia-Ta; Hsu, H. T.; 材料科學與工程學系; Department of Materials Science and Engineering
2008Characteristics of atomic-layer-deposited Al(2)O(3) high-k dielectric films grown on Ge substratesCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Liu, Jun-Cheng; Kei, Chi-Chung; Liu, Da-Ren; Hsiao, Chien-Nan; Yang, Chun-Hui; Changa, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2013Coaxial-structured ZnO/silicon nanowires extended-gate field-effect transistor as pH sensorLi, Hung-Hsien; Yang, Chi-En; Kei, Chi-Chung; Su, Chung-Yi; Dai, Wei-Syuan; Tseng, Jung-Kuei; Yang, Po-Yu; Chou, Jung-Chuan; Cheng, Huang-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2008Effects of interfacial sulfidization and thermal annealing on the electrical properties of an atomic-layer-deposited Al(2)O(3) gate dielectric on GaAs substrateCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Yang, Chun-Hui; Chang, Ching-Chih; Chang, Chun-Yen; Kei, Chi-Chung; Hsiao, Chien-Nan; Perng, Tsong-Pyng; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2009Effects of Minority-Carrier Response Behavior on Ge MOS Capacitor Characteristics: Experimental Measurements and Theoretical SimulationsCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Ling, Yu-Ting; Chang, Ruey-Dar; Kei, Chi-Chung; Hsiao, Chien-Nan; Liu, Jun-Cheng; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008Electrical and material characterization of atomic-layer-deposited Al(2)O(3) gate dielectric on ammonium sulfide treated GaAs substratesCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Chang, Ching-Chih; Kei, Chi-Chung; Yang, Chun-Hui; Hsiao, Chien-Nan; Perng, Tsong-Pyng; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2013Epitaxial Germanium on SOI Substrate and Its Application of Fabricating High I-ON/I-OFF Ratio Ge FinFETsChung, Cheng-Ting; Chen, Che-Wei; Lin, Jyun-Chih; Wu, Che-Chen; Chien, Chao-Hsin; Luo, Guang-Li; Kei, Chi-Chung; Hsiao, Chien-Nan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2014Experimental Demonstration of (111)-Oriented GaAs Metal-Oxide-Semiconductor Field-Effect-Transistors with Hetero-Epitaxial Ge Source/DrainHan, Tsung-Yu; Luo, Guang-Li; Cheng, Chao-Ching; Ko, Chih-Hsin; Wann, Clement H.; Kei, Chi-Chung; Hsiao, Chien-Nan; Chien, Chao-Hsin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2009Five-element circuit model using linear-regression method to correct the admittance measurement of metal-oxide-semiconductor capacitorCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Liu, Jun-Cheng; Chen, Yi-Cheng; Chang, Yao-Feng; Wang, Shin-Yuan; Kei, Chi-Chung; Hsiao, Chien-Nan; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
7-二月-2010Highly efficient flexible inverted organic solar cells using atomic layer deposited ZnO as electron selective layerWang, Jen-Chun; Weng, Wei-Tse; Tsai, Meng-Yen; Lee, Ming-Kun; Horng, Sheng-Fu; Perng, Tsong-Pyng; Kei, Chi-Chung; Yu, Chih-Chieh; Meng, Hsin-Fei; 物理研究所; Institute of Physics
1-八月-2009Junction and Device Characteristics of Gate-Last Ge p- and n-MOSFETs With ALD-Al(2)O(3) Gate DielectricCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Lin, Ching-Lun; Chen, Hung-Sen; Liu, Jun-Cheng; Kei, Chi-Chung; Hsiao, Chien-Nan; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2009Junction and Device Characteristics of Gate-Last Ge p- and n-MOSFETs With ALD-Al2O3 Gate DielectricCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Lin, Ching-Lun; Chen, Hung-Sen; Liu, Jun-Cheng; Kei, Chi-Chung; Hsiao, Chien-Nan; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
20-九月-2017Light energy transformation over a few nanometersHuang, Hung Ji; Liu, Bo-Heng; Su, James; Chen, Po-Jui; Lin, Chun-Ting; Chiang, Hai-Pang; Kao, Tsung Sheng; Chau, Yuan-Fong Chou; Kei, Chi-Chung; Hwang, Chi-Hung; 資訊工程學系; 光電工程學系; Department of Computer Science; Department of Photonics
1-一月-2010Study of the inversion behaviors of Al(2)O(3)/In(x)Ga(1-x)As metal-oxide-semiconductor capacitors with different In contentsWu, Yun-Chi; Chang, Edward Yi; Lin, Yueh-Chin; Kei, Chi-Chung; Hudait, Mantu K.; Radosavljevic, Marko; Wong, Yuen-Yee; Chang, Chia-Ta; Huang, Jui-Chien; Tang, Shih-Hsuan; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-一月-2010Study of the inversion behaviors of Al2O3/InxGa1-xAs metal-oxide-semiconductor capacitors with different In contentsWu, Yun-Chi; Chang, Edward Yi; Lin, Yueh-Chin; Kei, Chi-Chung; Hudait, Mantu K.; Radosavljevic, Marko; Wong, Yuen-Yee; Chang, Chia-Ta; Huang, Jui-Chien; Tang, Shih-Hsuan; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 16 筆資料，總共 16 筆