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公開日期標題作者
18-九月-1995EFFECTS OF COLUMN-III ALKYL SOURCES ON DEEP LEVELS IN GAN GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXYLEE, WI; HUANG, TC; GUO, JD; FENG, MS; 材料科學與工程學系; 電子物理學系; 電子與資訊研究中心; Department of Materials Science and Engineering; Department of Electrophysics; Microelectronics and Information Systems Research Center
18-九月-1995EFFECTS OF COLUMN-III ALKYL SOURCES ON DEEP LEVELS IN GAN GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXYLEE, WI; HUANG, TC; GUO, JD; FENG, MS; 材料科學與工程學系; 電子物理學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electrophysics; D Link NCTU Joint Res Ctr
15-三月-1994ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF ALASXSB1-X FILMS USING TERTIARYBUTYLARSINECHEN, WK; OU, J; LEE, WI; 交大名義發表; 電子物理學系; National Chiao Tung University; Department of Electrophysics
24-十月-1994SELECTIVE EPITAXIAL-GROWTH OF GAINP BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION USING ETHYLDIMETHYLINDIUM AS IN-SOURCECHAN, SH; SZE, SM; CHANG, CY; LEE, WI; 電子物理學系; 電控工程研究所; Department of Electrophysics; Institute of Electrical and Control Engineering
1-十二月-1994SELECTIVE EPITAXIAL-GROWTH OF GAINP BY LP-MOCVD USING ETHYLDIMETHYLINDIUM, TRIMETHYLINDIUM, TRIMETHYLGALLIUM AND TRIETHYLGALLIUM AS GROUP-III SOURCESCHAN, SH; SZE, SM; CHANG, CY; LEE, WI; 電子物理學系; Department of Electrophysics
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