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公開日期標題作者
1-四月-1995HIGH-PERFORMANCE SUPERTHIN OXIDE/NITRIDE/OXIDE STACKED DIELECTRICS FORMED BY LOW-PRESSURE OXIDATION OF ULTRATHIN NITRIDELIU, HW; SU, HP; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-三月-1992INFLUENCE OF IMPLANT CONDITION ON THE TRANSIENT-ENHANCED DIFFUSION OF ION-IMPLANTED BORON IN SILICONJUANG, MH; WAN, FS; LIU, HW; CHENG, KL; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-1995NOVEL TUNNELING DIELECTRIC PREPARED BY OXIDATION OF ULTRATHIN RUGGED POLYSILICON FOR 5-V-ONLY NONVOLATILE MEMORIESSU, HP; LIU, HW; WANG, PW; CHENG, PW; JEN, IM; HONG, G; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-1995SUPERIOR LOW-PRESSURE-OXIDIZED SI3N4 FILMS ON RAPID-THERMAL-NITRIDED POLY-SI FOR HIGH-DENSITY DRAMSCHANG, HC; LIU, HW; SU, HP; HONG, G; 奈米中心; Nano Facility Center
1-十一月-1995SUPERIOR LOW-PRESSURE-OXIDIZED SI3N4 FILMS ON RAPID-THERMAL-NITRIDED POLY-SI FOR HIGH-DENSITY DRAMSCHANG, HC; LIU, HW; SU, HP; HONG, G; 奈米中心; Nano Facility Center
1-十一月-1994SUPERTHIN O/N/O STACKED DIELECTRICS FORMED BY OXIDIZING THIN NITRIDES IN LOW-PRESSURE OXYGEN FOR HIGH-DENSITY MEMORY DEVICESSU, HP; LIU, HW; HONG, G; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-1992SUPPRESSION OF ANOMALOUS DIFFUSION OF ION-IMPLANTED BORON IN SILICON BY LASER PROCESSINGJUANG, MH; WAN, FS; LIU, HW; CHENG, KL; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics