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公開日期標題作者
1-一月-2007A highly reliable self-aligned graded oxide WOx resistance memory: Conduction mechanisms and reliabilityHo, ChiaHua; Lai, E. K.; Lee, M. D.; Pan, C. L.; Yao, Y. D.; Hsieh, K. Y.; Liu, Rich; Lu, C. Y.; 材料科學與工程學系; Department of Materials Science and Engineering
2006Insight of stress effect on the ONO stack layer in a SONOS-type flash memory cellYeh, C. C.; Liao, Y. Y.; Wang, Tahui; Tsai, W. J.; Lu, T. C.; Kao, H. L.; Ou, T. F.; Chen, M. S.; Chen, Y. K.; Lai, E. K.; Shih, Y. H.; Ting, WenChi; Ku, Y. H. Joseph; Lit, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009MULTI-LEVEL OPERATION OF FULLY CMOS COMPATIBLE WOX RESISTIVE RANDOM ACCESS MEMORY (RRAM)Chien, W. C.; Chen, Y. C.; Chang, K. P.; Lai, E. K.; Yao, Y. D.; Lin, P.; Gong, J.; Tsai, S. C.; Hsieh, S. H.; Chen, C. F.; Hsieh, K. Y.; Liu, R.; Lu, Chih-Yuan; 材料科學與工程學系; Department of Materials Science and Engineering
1-二月-2010Unipolar Switching Behaviors of RTO WO(X) RRAMChien, W. C.; Chen, Y. C.; Lai, E. K.; Yao, Y. D.; Lin, P.; Horng, S. F.; Gong, J.; Chou, T. H.; Lin, H. M.; Chang, M. N.; Shih, Y. H.; Hsieh, K. Y.; Liu, R.; Lu, Chih-Yuan; 材料科學與工程學系; 奈米中心; Department of Materials Science and Engineering; Nano Facility Center
1-二月-2010Unipolar Switching Behaviors of RTO WOX RRAMChien, W. C.; Chen, Y. C.; Lai, E. K.; Yao, Y. D.; Lin, P.; Horng, S. F.; Gong, J.; Chou, T. H.; Lin, H. M.; Chang, M. N.; Shih, Y. H.; Hsieh, K. Y.; Liu, R.; Lu, Chih-Yuan; 材料科學與工程學系; 奈米中心; Department of Materials Science and Engineering; Nano Facility Center
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