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公開日期標題作者
1-十二月-2000Effect of rapid thermal annealed TiN barrier layer on BST capacitors prepared by RF magnetron cosputter system at low substrate temperaturesHwang, CC; Jaing, CC; Lai, MJ; Chen, JS; Huang, S; Juang, MH; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2001Effect of rapid-thermal-annealed TiN barrier layer on the Pt/BST/Pt capacitors prepared by RF magnetron co-sputter technique at low substrate temperatureHwang, CC; Juang, MH; Lai, MJ; Jaing, CC; Chen, JS; Huang, S; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2000Effect of TiN treated by rapid thermal annealing on properties of BST capacitors prepared by RF magnetron co-sputter system at low substrate temperatureTeng, TH; Hwang, CC; Lai, MJ; Huang, SC; Chen, JS; Jaing, CC; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2003Effects of post-oxygen plasma treatment on Pt/(Ba,Sr)TiO3/Pt capacitors at low substrate temperaturesShye, DC; Hwang, CC; Lai, MJ; Jaing, CC; Chen, JS; Huang, S; Juang, MH; Chiou, BS; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2003Low temperature radio-frequency-sputtered (Ba, Sr)TiO3 films on Pt/TiN/Ti/Si substrates with various oxygen/argon mixing ratiosShye, DC; Chiou, BS; Lai, MJ; Hwang, CC; Jiang, CC; Chen, JS; Cheng, MH; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-十二月-2000Low-temperature process to improve the leakage current of (Ba, Sr)TiO3 films on Pt/TiN/Ti/Si substratesHwang, CC; Lai, MJ; Jaing, CC; Chen, JS; Huang, S; Juang, MH; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 6 筆資料，總共 6 筆