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公開日期標題作者
1-二月-2006AlGaInP light-emitting diodes with stripe patterned omni-directional reflectorLee, YJ; Lu, TC; Kuo, HC; Wang, SC; Liou, MJ; Chang, CW; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ; 光電工程學系; Department of Photonics
1-五月-2006Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substratesLee, YJ; Hwang, JM; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ; Lu, TC; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics
1-三月-2006GaN-based LEDs with Al-deposited V-shaped sapphire facet mirrorLee, YJ; Hwang, JM; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ; Lu, TC; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics
1-二月-2006High brightness AlGaInP-based light emitting diodes by adopting the stripe-patterned omni-directional reflectorLee, YJ; Lu, TC; Kuo, HC; Wang, SC; Liou, MJ; Chang, CW; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ; 光電工程學系; Department of Photonics
1-十二月-2005Improvement in light-output efficiency of AlGaInP LEDs fabricated on stripe patterned epitaxyLee, YJ; Tseng, HC; Kuo, HC; Wang, SC; Chang, CW; Hsu, TC; Yang, YL; Hsieh, MH; Jou, MJ; Lee, BJ; 光電工程學系; Department of Photonics
2005Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrateLee, YJ; Hsu, TC; Kuo, HC; Wang, SC; Yang, YL; Yen, SN; Chu, YT; Shen, YJ; Hsieh, MH; Jou, MJ; Lee, BJ; 光電工程學系; Department of Photonics
25-九月-2005Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substratesLee, YJ; Hsu, TC; Kuo, HC; Wang, SC; Yang, YL; Yen, SN; Chu, YT; Shen, YJ; Hsieh, MH; Jou, MJ; Lee, BJ; 光電工程學系; Department of Photonics
1-十一月-2005Increasing the extraction efficiency of AlGaInP LEDs via n-side surface rougheningLee, YJ; Kuo, HC; Wang, SC; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ; 光電工程學系; Department of Photonics
1996Novel approach to enhance the optical property in AlGaAs and InGaAlP by natural ordering during growthChin, A; Lin, BC; Gu, GL; Hsieh, KY; Jou, MJ; Lee, BJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics