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1-八月-2005Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELsYang, HPD; Lu, C; Hsiao, R; Chiou, C; Lee, C; Huang, C; Yu, H; Wang, C; Lin, K; Maleev, NA; Kovsh, AR; Sung, C; Lai, C; Wang, J; Chen, J; Lee, T; Chi, JY; 電子物理學系; Department of Electrophysics
1-十一月-2001A comparative study of Ar and H-2 as carrier gases for the growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition at low temperatureLee, WH; Lin, JC; Lee, C; Cheng, HC; Yew, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2004Dea approach for the current and the cross period efficiency for evaluating the vocational educationLiu, LC; Lee, C; Tzeng, GH; 科技管理研究所; Institute of Management of Technology
1-十二月-2000Design and implementation of ultra-low latency optical label switching for packet-switched WDM networksMeagher, B; Chang, GK; Ellinas, G; Lin, YM; Xin, W; Chen, TF; Yang, X; Chowdhury, A; Young, J; Yoo, SJ; Lee, C; Iqbal, MZ; Robe, T; Dai, H; Chen, YJ; Way, WI; 電信工程研究所; Institute of Communications Engineering
1999Development of low-temperature wafer level vacuum packaging for microsensorsHuang, WF; Shie, JS; Lee, C; Gong, SC; Peng, CJ; 光電工程學系; Department of Photonics
22-二月-2002Effects of CH4/SiH4 flow ratio and microwave power on the growth of beta-SiC on Si by ECR-CVD using CH4/SiH4/Ar at 200 degrees CLee, WH; Lin, JC; Lee, C; Cheng, HC; Yew, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1997Low temperature deposited highly-conductive N-type SiC thin filmsCheng, KL; Cheng, HC; Lee, WH; Lee, C; Yew, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1996Polycrystalline beta-SiC film growth on Si by ECR-CVD at 178-500 degrees CCheng, KL; Liu, CC; Fu, CM; Cheng, HC; Lee, C; Yew, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-八月-2000Wafer bonding by low-temperature solderingLee, C; Huang, WF; Shie, JS; 光電工程學系; Department of Photonics
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