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公開日期標題作者
1-五月-1996Combined absorption and self-decomposition of ozone in aqueous solutions with interfacial resistanceChang, CY; Chiu, CY; Lee, SJ; Huang, WH; Yu, YH; Liou, HT; Ku, Y; Chen, JN; 環境工程研究所; Institute of Environmental Engineering
1-二月-2005Germanium pMOSFETs with Schottky-barrier germanide S/D, high-kappa gate dielectric and metal gateZhu, SY; Li, R; Lee, SJ; Li, MF; Du, AY; Singh, J; Zhu, CX; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2004Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrodeZhu, SY; Yu, HY; Chen, JD; Whang, SJ; Chen, JH; Shen, C; Zhu, CX; Lee, SJ; Li, MF; Chan, DSH; Yoo, WJ; Du, AY; Tung, CH; Singh, J; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2004N-type Schottky barrier source/drain MOSFET using ytterbium silicideZhu, SY; Chen, JD; Li, MF; Lee, SJ; Singh, J; Zhu, CX; Du, AY; Tung, CH; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
28-二月-2005Photochemistry and photodissociation of benzosultine and naphthosultine: electronic relaxation of sultines and kinetics and theoretical studies of fragment o-quinodimethanesTang, KC; Lee, SJ; Chi, SH; Lu, KL; Chen, WC; Yu, CH; Chen, IC; Wu, SL; Chen, CC; Liu, WD; Chen, LJ; Wang, NS; Chung, WS; 應用化學系; Department of Applied Chemistry
1-一月-1998A refined model for ozone mass transfer in a bubble columnHuang, WH; Chang, CY; Chiu, CY; Lee, SJ; Yu, YH; Liou, HT; Ku, Y; Chen, JN; 環境工程研究所; Institute of Environmental Engineering
1-一月-1998A refined model for ozone mass transfer in a bubble columnHuang, WH; Chang, CY; Chiu, CY; Lee, SJ; Yu, YH; Liou, HT; Ku, Y; Chen, JN; 環境工程研究所; Institute of Environmental Engineering
1-十一月-1997A refined model for ozone mass transfer in a semibatch stirred vesselChiu, CY; Chang, CY; Huang, WH; Lee, SJ; Yu, YH; Liou, HT; Ku, Y; Chen, JN; 環境工程研究所; Institute of Environmental Engineering
1-五月-2004Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrodeZhu, SY; Yu, HY; Whang, SJ; Chen, JH; Shen, C; Zhu, CX; Lee, SJ; Li, MF; Chan, DSH; Yoo, WJ; Du, AY; Tung, CH; Singh, J; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics