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公開日期標題作者
2008AlGaInAs quantum-well 1.3-mu m laser by a diode-pumped actively Q-switched Nd : GdVO4 laser - art. no. 68712KHuang, S. C.; Su, K. W.; Li, A.; Liu, S. C.; Chen, Y. F.; Hunag, K. F.; 電子物理學系; Department of Electrophysics
1-六月-2007AlGaInAs quantum-well as a saturable absorber in a diode-pumped passively Q-switched solid-state laserHuang, S. C.; Liu, S. C.; Li, A.; Su, K. W.; Chen, Y. F.; Huang, K. F.; 電子物理學系; Department of Electrophysics
1-三月-2009AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO(4) laserHuang, S. C.; Chang, H. L.; Su, K. W.; Li, A.; Liu, S. C.; Chen, Y. F.; Huang, K. F.; 電子物理學系; Department of Electrophysics
1-三月-2009AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO4 laserHuang, S. C.; Chang, H. L.; Su, K. W.; Li, A.; Liu, S. C.; Chen, Y. F.; Huang, K. F.; 電子物理學系; Department of Electrophysics
1-六月-2008High-peak-power passively Q-switched Nd : YAG laser at 946 nmHuang, Y. P.; Su, K. W.; Li, A.; Chen, Y. F.; Huang, K. F.; 電子物理學系; Department of Electrophysics
1-九月-2006InGaAsP quantum-wells saturable absorber for diode-pumped passively Q-switched 1.3-mu m lasersLi, A.; Liu, S. C.; Su, K. W.; Liao, Y. L.; Huang, S. C.; Chen, Y. F.; Huang, K. F.; 電子物理學系; Department of Electrophysics
2010Low-temperature study of lasing characteristics for 1.3-mu m AlGaInAs quantum-well laser pumped by an actively Q-switched Nd:YAG laserSu, K. W.; Chen, Yi-Fan; Huang, S. C.; Li, A.; Liu, S. C.; Chen, Y. F.; Huang, K. F.; 電子物理學系; Department of Electrophysics
1-九月-2007Semiconductor quantum-well saturable absorbers for efficient passive Q switching of a diode-pumped 946 nm Nd : YAG laserHuang, Y. P.; Liang, H. C.; Huang, J. Y.; Su, K. W.; Li, A.; Chen, Y. F.; Huang, K. F.; 電子物理學系; Department of Electrophysics
顯示 1 到 8 筆資料，總共 8 筆