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公開日期標題作者
1-二月-2007High-temperature stable IrxSi gates with high work function on HfSiON p-MOSFETsHung, B. F.; Wu, C. H.; Chin, Albert; Wang, S. J.; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, Shih C.; Liang, Mong-Song; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
16-十月-2006Spatial and energetic distribution of border traps in the dual-layer HfO2/SiO2 high-k gate stack by low-frequency capacitance-voltage measurementWu, Wei-Hao; Tsui, Bing-Yue; Chen, Mao-Chieh; Hou, Yong-Tian; Jin, Yin; Tao, Hun-Jan; Chen, Shih-Chang; Liang, Mong-Song; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2007Transient charging and discharging behaviors of border traps in the dual-layer HfO2/SiO2 high-k gate stack observed by using low-frequency charge pumping methodWu, Wei-Hao; Tsui, Bing-Yue; Chen, Mao-Chieh; Hou, Yong-Tian; Jin, Yin; Tao, Hun-Jan; Chen, Shih-Chang; Liang, Mong-Song; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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