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公開日期
標題
作者
六月-2016
3D resistive RAM cell design for high-density storage class memory-a review
Hudec, Boris
;
Hsu, Chung-Wei
;
Wang, I-Ting
;
Lai, Wei-Li
;
Chang, Che-Chia
;
Wang, Taifang
;
Frohlich, Karol
;
Ho, Chia-Hua
;
Lin, Chen-Hsi
;
Hou, Tuo-Hung
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-一月-2013
3D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating Current
Hsu, Chung-Wei
;
Wan, Chia-Chen
;
Wang, I-Ting
;
Chen, Mei-Chin
;
Lo, Chun-Li
;
Lee, Yao-Jen
;
Jang, Wen-Yueh
;
Lin, Chen-Hsi
;
Hou, Tuo-Hung
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-八月-2010
Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO(3)-Based Memory Films
Lin, Meng-Han
;
Wu, Ming-Chi
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-八月-2010
Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO3-Based Memory Films
Lin, Meng-Han
;
Wu, Ming-Chi
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
十月-2016
Enhanced Properties in Conductive-Bridge Resistive Switching Memory With Oxide-Nitride Bilayer Structure
Tsai, Tsung-Ling
;
Jiang, Fa-Shen
;
Ho, Chia-Hua
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-四月-2012
Flexible One Diode-One Resistor Crossbar Resistive-Switching Memory
Huang, Jiun-Jia
;
Hou, Tuo-Hung
;
Hsu, Chung-Wei
;
Tseng, Yi-Ming
;
Chang, Wen-Hsiung
;
Jang, Wen-Yueh
;
Lin, Chen-Hsi
;
電子物理學系
;
Department of Electrophysics
1-四月-2011
High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO(3) Memory Devices
Lin, Meng-Han
;
Wu, Ming-Chi
;
Huang, Yi-Han
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-四月-2011
High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO3 Memory Devices
Lin, Meng-Han
;
Wu, Ming-Chi
;
Huang, Yi-Han
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
28-七月-2010
High-speed and localized resistive switching characteristics of double-layer SrZrO(3) memory devices
Lin, Meng-Han
;
Wu, Ming-Chi
;
Huang, Chun-Yang
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
28-七月-2010
High-speed and localized resistive switching characteristics of double-layer SrZrO3 memory devices
Lin, Meng-Han
;
Wu, Ming-Chi
;
Huang, Chun-Yang
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
2010
Highly Stable SrZrO3 Bipolar Resistive Switching Memory by Ti Modulation Layer
Wu, Ming-Chi
;
Lin, Meng-Han
;
Yeh, Yu-Ting
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
2013
Improved Resistive Switching Characteristics by Al2O3 Layers Inclusion in HfO2-Based RRAM Devices
Huang, Chun-Yang
;
Jieng, Jheng-Hong
;
Jang, Wen-Yueh
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-十月-2008
Improvement of resistive switching characteristics in SrZrO3 thin films with embedded Cr layer
Lin, Chih-Yang
;
Lin, Meng-Han
;
Wu, Ming-Chi
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
14-五月-2015
Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structure
Chand, Umesh
;
Huang, Kuan-Chang
;
Huang, Chun-Yang
;
Ho, Chia-Hua
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-八月-2011
Low-Power and Highly Reliable Multilevel Operation in ZrO(2) 1T1R RRAM
Wu, Ming-Chi
;
Lin, Yi-Wei
;
Jang, Wen-Yueh
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-八月-2011
Low-Power and Highly Reliable Multilevel Operation in ZrO2 1T1R RRAM
Wu, Ming-Chi
;
Lin, Yi-Wei
;
Jang, Wen-Yueh
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-九月-2006
Resistive switching mechanisms of V-doped SrZrO3 memory films
Lin, Chun-Chieh
;
Tu, Bing-Chung
;
Lin, Chao-Cheng
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
15-十二月-2007
Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films
Lin, Chih-Yang
;
Lin, Chun-Chieh
;
Huang, Chun-Hsing
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-四月-2007
Resistive switching properties of SrZrO(3)-based memory films
Lin, Chun-Chieh
;
Lin, Chao-Cheng
;
Tu, Bing-Chung
;
Yu, Jung-Sheng
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
3-十二月-2007
Stable resistive switching behaviors of sputter deposited V-doped SrZrO3 thin films
Lin, Chun-Chieh
;
Yu, Jung-Sheng
;
Lin, Chih-Yang
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics